Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.263-266
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- 2001
Study on dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_{3}$ thin films for high-frequency passive device
고주파 수동소자 유전체용 $Ba_{0.5}Sr_{0.5}TiO_{3}$ 박막의 유전특성에 관한 연구
Abstract
In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O