• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.299-307
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• 1997

NdFeB films have been grown onto Si(100) substrate by a KrF pulsed laser ablation of the targets of $Nd_xFe_{90.98-x}B_{9.02}$ (x=17.51~27.51) at the substrate temperature of 620~700 $^{\circ}C$ and the laser beam energy density of 2.75~5.99 J/$\textrm{cm}^2$. The films exhibit no preferred orientation, however, good hard magnetic properties were produced from as-deposited condition : $4{\pi}M_s$=7 kG, $4{\pi}M_r$=4 kG, and $H_c$=300~1000 Oe. The depositon rate was not greatly influenced by changing the substrate temperature, but it increases linearly by increasing the beam energy density. The beam energy density of 3 J/$\textrm{cm}^2$ gave the optimal condition to have the highest $4{\pi}M_r$ and $H_c$ as well. The higher content of Nd induces a higher coercivity and $4{\pi}M_r$ at the same time without prominent change in $4{\pi}M_s$.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.142-147
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• 2005

The embrittlement of fast neutron-irradiated reactor pressure vessel (RPV) steels was investigated by X-ray diffraction patterns at room temperature and $M\ddot{o}ssbauer$ spectroscopy at room- and liquid nitrogen-temperature. Neutron fluence on the samples were $10^{12},\;10^{13},\;10^{14},\;10^{15},\;10^{16},\;10^{17},\;10^{18}\;n/cm^2$. The X-ray diffraction patterns showed that the structure of the neutron unirradiated sample was bcc type, where as but the neutron irradiated samples with the fluence higher than $10^{17}\;n/{\cal}cm^2$ were so severely damaged, that bcc type structure disappeared. The $M\ddot{o}ssbauer$ spectra of all samples showed superposition of two or more sextets. In this paper all $M\ddot{o}ssbauer$ spectra were fitted by three set of sextet. The isomer shift and quadrupole splitting values were found around zero. At liquid nitrogen temperature, magnetic hyperfine field and absorption area increase rapidly S 1 sextet in the samples of $10^{17}\~10^{18}\;n/{\cal}cm^2$ neutron fluences. And at room temperature, magnetic hyperfine field and absorption increased rapidly at SI sextet in the samples of $10^{17}\~10^{18}\;n/{\cal}cm^2$ neutron fluences. This rapid increase of magnetic hyperfine field and absorption area were inferred to be caused by the change of $^{56}Fe,\;^{55}Mn$ into $^{57}Fe$ due to by neutron irradiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.373-379
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• 2013

Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.72-74
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• 2002

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.