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http://dx.doi.org/10.4313/JKEM.2013.26.5.373

Effects of Oxygen on the Properties of Mg-doped Zinc Tin Oxide Films Prepared by rf Magnetron Sputtering  

Park, Ki Cheol (Department of Semiconductor Engineering and ERI, Gyeongsang National University)
Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.5, 2013 , pp. 373-379 More about this Journal
Abstract
Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.
Keywords
Transparent thin film transistors; Zinc tin oxide; XPS; Optical transmittance; Energy band gap;
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