Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2018.28.4.152

Microstructural analysis of the single crystalline AlN and the effect of the annealing on the crystalline quality  

Kim, Jeoung Woon (Div. of Materials Engineering & Convergence Technology, Gyeongsang National Univ.)
Bae, Si-Young (Korea Institute of Ceramic Engineering and Technology, Energy & Environment Division)
Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology, Energy & Environment Division)
Kang, Seung-Min (International Graduate School of Design Convergence, Hanseo University)
Kang, Sung (Research Institute of Industrial Science and Technology, Analysis and Assessment Group)
Kim, Cheol-Jin (Research Institute of Green Energy Convergence Technology, Gyeongsang National Univ.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.4, 2018 , pp. 152-158 More about this Journal
Abstract
PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.
Keywords
AlN; Annealing; EBSD; X-ray topography; Rietveld refinement;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 A. Khan, K. Balakrishnan and T. Katona, "Ultraviolet light-emitting diodes based on group three nitrides", Nat. Photonics. 2 (2008) 81.
2 M. Miyanaga, N. Mizuhara, S. Fujiwara, M. Shimazu, H. Nakahata and T. Kawase, "Evaluation of AlN single crystal grown by sublimation method", J. Cryst. Growth 300 (2007) 45.   DOI
3 Y.J. Joo, C.H. Park, J.J. Jeong, S.M. Kang, G.Y. Ryu, S.Kang and C.J. Kim, "Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 127.   DOI
4 S.M. Kang, "A study on the heat treatment process for AlN single crystal grown by PVT methode", J. Korean Cryst. Growth Cryst. Technol. 27 (2017) 66.
5 H.S. Kang, S.H. Kang, C.W. Park, J.H. Park, H.M. Kim, J.H. Lee, H.A. Lee, J.H. Lee, S.M. Kang and K.B. Shim, "The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method", J. Korean Cryst. Growth Cryst. Technol. 27 (2017) 143.
6 T.R. Bieler, H. Jiang, L.P. Lehman, T. Kirkpatrick, E.J. Cotts and B. Nandagopal, "Influence of Sn grain size and orientation on the thermomechanical response and reliability of Pb-free solder joints", Trans. Compo. Pack. Tech. 31 (2008) 370.   DOI
7 T.S. Argunova, M.Yu. Gutkin, J.H. Je, J.H. Lim, E.N. Mokhov and A.D. Roenkov, "Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals", CrystEngComm 16 (2014) 8921.
8 S. Sintonen, S. Suihkonen, H. Jussila, A. Danilewsky, R. Stankiewicz, T.O. Tuomi and H. Lipsanen, "Largearea analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography", Appli. Phys. Exp 7. 091003 (2014) 1.
9 E. Wierzbickaa, A. Malinowskaa, K. Wieteskab, W. Wierzchowskia, M.L. Sosnowskac, M. Swirkowicza, T. Lukasiewicza and C. Paulmannd, "Characterisation of the defect structure in gadolinum orthovanadate single crystals grown by the czochralski method", Act. Phys. Pol. A 121 (2012) 907.