Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Electrical properties and thermal stability of Al/$WN_x$/Ti submicron contact structure

  • Kim, Yong-Tae (Div. System Engineering, Semiconductor Devices Laboratory, Korea Institute of Science and Technology) ;
  • Sim, Hyun-Sang (Div. System Engineering, Semiconductor Devices Laboratory, Korea Institute of Science and Technology) ;
  • Kim, Seong-Il (Div. System Engineering, Semiconductor Devices Laboratory, Korea Institute of Science and Technology)
  • Published : 2002.11.01
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Abstract

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

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