• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.99-99
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• 2010

최근 자동차 산업은 고효율 및 친환경이라는 전세계적인 이슈에 따라 고연비의 자동차 개발에 총력을 다하고 있다. 그러므로 다양한 고강도 강 및 경량 금속이 자동차의 차체에 적용되고 있다. 특히 철강재료에 있어서 기존의 저 탄소강에서 다양한 기능을 갖은 고강도 강으로 그 종류가 다양화되고 있으며 이에 따라 저항 점용접을 이용한 차체의 접합은 점점 이종의 강판을 접합하는 비율이 점차로 늘어나고 있다. 이와 같이 강판의 종류가 다양해짐에 따라 수많은 이종 강판에 대한 조합이 생기고 있으며, 이를 모두 실험을 통해 최적 용접조건을 찾기에는 많은 시간과 노력이 투자되어야 된다. 그러나 시뮬레이션 기법으로 이종 접합의 초기 용접조건에 대한 정보를 얻는다면, 최소의 실험을 통해 좀 더 손쉽게 최적의 용접조건을 도출할 수 있다. 그러므로 본 연구에서는 실제 자동차에 많이 쓰이는 강판인 EDDQ급 도금강판 0.7t와 440R 급 1.2t 및 DP 590 1.0t의 3종류의 이종 강판에 대한 점 용접특성을 저항 점용접 전문 소프트웨어인 SORPAS를 이용하여 시뮬레이션하고 분석하였다. 시뮬레이션은 겹치기 순서에 따라 용접 전류, 가압력, 용접 시간을 변수로 하여 각각의 겹침 순서에 대한 2개의 용접 점에 대한 너겟의 크기를 분석하였으며 로브 곡선을 얻을 수 있었다. 이를 통해 3겹의 겹치기 순서에 따른 용접 특성을 비교할 수 있었으며, 이것을 실제 생산라인의 자동차 차체의 조립 순서 결정에 있어서 응용함으로써 용접 특성을 고려한 차체 조립에 적용이 가능할 것으로 사료된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.197-200
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• 2001

반응성 스퍼터링법으로 TaN film을 증착한 후 열처리온도에 따라 TaN 박막의 $R_s$(sheet resistance) 특성을 평가하고 미세구조 변화에 따른 전기적 특성 변화를 고찰하였다. TaN 박막을 열처리한 결과 $400^{\circ}C$에서 $600^{\circ}C$까지는 (110)의 회절피크만 보이다가 $700^{\circ}C$ 에서는 (200)의 회절 피크가 나타났고 특히 as-deposition 상태와 $300^{\circ}C$ 열처리시에는 Ta와 TaN 상이 혼재한 상태로 나타났으며 전기저항 변화는 as-deposition 상태가 $140{\Omega}/{\square}$로 가장 높았으며 열처리 온도가 증가함에 따라 저항은 점차적으로 감소하다가 $600^{\circ}C$와 $700^{\circ}C$에서는 전기저항이 다시 증가하였다. $500^{\circ}C$까지는 표면 형상이나 표면조도보다는 열처리 온도의 증가에 따른 TaN 박막의 결정구조 변화가 전기저항에 영향을 주는 주 요인으로 작용하고, $600^{\circ}C$와 $700^{\circ}C$ 열처리시에 결정립의 증가에도 불구하고 전기저항이 증가하는 것은 고온 열처리에 의한 표면조도가 증가하였기 때문이라고 생각된다.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.607-610
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• 2005

In this paper, Ni Germanosilicide using Ni-Ta/Co/TiN is proposed to improve thermal stability. The sheet resistance of Ni Germanosilicide utilizing pure Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30min. However, using the proposed Ni-Ta/Co/TiN structure, low temperature silicidation and wide range of RTP process window were achieved.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• Korean Journal of Metals and Materials
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• v.49 no.1
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• pp.64-72
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• 2011

The spot weldability of dissimilar metal joints between austenitic stainless steels (STS316)/IF steels and ferritic stainless steels (STS430)/IF steels was investigated. This study was aimed to determine the spot welding parameters for a dissimilar metal joint and to evaluate the dissimilar metal joint's weldability, including its welding nugget shape, tensile-shear strength, hardness, and microstructure. The comparison of these results was described in terms of fracture behavior. Compared with the weld lobe of similar metal joints, dissimilar metal joints (STS430/IF) had reduced weld current range. However, the weld lobe of STS316/IF steel joint showed increased weld current range. This is because the dilution of chemical composition in the molten weld pool suppressed the heat input being caused by Joule heat with current flow through the samples. The microstructure of the fusion zone was fully martensite and mixture of ferrite and martensite for austenitic stainless steel/IF steel and ferritic stainless steel/IF steel combination, respectively. The experimental results showed that the shape of nugget was asymmetric, in which the fusion zone of the austenitic and ferritic stainless steel sheet was larger due to the higher bulk-resistance. The predicted microstructure by using the Schaeffler diagram was well matched with experimental results. After peel test, the fracture was initiated from heat affected zone of ferritic stainless steel sheet side, however the final fracture was propagated into the IF steel sheet side due to its lower strength.

• Journal of the Korea Institute of Military Science and Technology
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• v.27 no.3
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• pp.311-318
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• 2024

In this paper, a design for a radio frequency(RF) and infrared(IR) absorber with metasurfaces is discussed in microwave frequency bands. The RF absorber includes double layers of metasurfaces to operate in S- and X-bands. Effects of sheet resistance of the metasurfaces and thicknesses of dielectric supporting layers on reflection responses are investigated. An IR stealth layer incorporates an array of conductive grids with slits to reflect IR signals but to transmit RF signals and visible rays. Periodicity of the grids and slits is studied for transmission responses in the X-band and a surface area ratio. Reflection responses of the RF/IR multispectral absorber are found to be lower than -10 dB and -16 dB in the S- and X-bands, respectively, from full-wave simulation. Finally, the RF/IR multispectral absorber is fabricated and its reflection responses are measured to verify designed performance.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.603-606
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• 2005

In this paper, the formation and thermal stability of Ni-silicide using Ni-Pd alloys is studied for ultra shallow S/D junction of nano-scale CMOSFETs. There are no different effects when Ni-Pd is used in single structure and TiN capping structure. But, in case of Cobalt interlayer structure, it was found that Pure Ni had lower sheet resistance than Ni-Pd, because of a thick silicide. Also, Ni-Pd has merits that surface of silicide and interface between silicide and silicon have a good morphology characteristics. As a result, Ni-Pd is an optimal candidate for shallow S/D junction when cobalt is used for thermal stability.