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The effect of annealing conditions on ultra shallow $ p^＋-n$ junctions formed by low energy ion implantation  

김재영 (한국항공대학교 전자.정보통신.컴퓨터공학부)
이충근 (한국항공대학교 전자.정보통신.컴퓨터공학)
홍신남 (한국항공대학교 전자.정보통신.컴퓨터공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.5, 2004 , pp. 37-42 More about this Journal
Abstract
Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.
Keywords
RTA;
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Times Cited By KSCI : 1  (Citation Analysis)
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