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High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes  

Kim, Jihyun (Department of Chemical Engineering, University of Florida)
Ren, F. (Department of Chemical Engineering, University of Florida)
Schoenfeld, D. (Department of Nuclear and Radiological Engineering, University of Florida)
Pearton, S.J. (Department of Materials Science and Engineering, University of Florida)
Baca, A.G. (Sandia National Laboratories)
Briggs, R.D. (Sandia National Laboratories)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.4, no.2, 2004 , pp. 124-127 More about this Journal
Abstract
W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.
Keywords
GaN; irradiation; contact; stability; annealing; rectifiers;
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