Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on integrated device TaN/$Al_2O_3$ thin film resistor development

TaN/$Al_2O_3$ 집적화 박막 저항소자 개발에 관한 연구

  • Kim, I.S. (Korea Electrotechnology Research Institute) ;
  • Cho, Y.R. (Korea Electrotechnology Research Institute) ;
  • Min, B.K. (Korea Electrotechnology Research Institute) ;
  • Song, J.S. (Korea Electrotechnology Research Institute)
  • 김인성 (한국전기연구원 전자기소자연구그룹) ;
  • 조영란 (한국전기연구원 전자기소자연구그룹) ;
  • 민복기 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹)
  • Published : 2002.07.10
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Abstract

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

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