JSTS:Journal of Semiconductor Technology and Science

  • 제4권2호
  • /
  • Pages.124-127
  • /
  • 2004
  • /
  • 1598-1657(pISSN)
  • /
  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes

  • Kim, Jihyun (Department of Chemical Engineering, University of Florida) ;
  • Ren, F. (Department of Chemical Engineering, University of Florida) ;
  • Schoenfeld, D. (Department of Nuclear and Radiological Engineering, University of Florida) ;
  • Pearton, S.J. (Department of Materials Science and Engineering, University of Florida) ;
  • Baca, A.G. (Sandia National Laboratories) ;
  • Briggs, R.D. (Sandia National Laboratories)
  • 발행 : 2004.06.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

키워드

참고문헌

  1. E. R. Brown, Solid-State Electron. 43 1918(1998) https://doi.org/10.1016/S0038-1101(98)00245-7
  2. G. T. Heydt, B. J. Skromme, Mater. Res. Soc. Symp. Proc., 483 3(1998)
  3. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phase, J. M. Redwing, Appl. Phys. Lett., 74 1266(1999) https://doi.org/10.1063/1.123520
  4. A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, K. P. Lee, S. J. Pearton, Appl. Phys. Lett., 78 823(2001) https://doi.org/10.1063/1.1346622
  5. J.-I. Chyi, C. M. Lee, C. C. Chuo, X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, S. N. G. Chu, and R. G. Wilson, Solid-State Electron., 44 613(2000) https://doi.org/10.1016/S0038-1101(99)00183-5
  6. A. P. Zhang, G. T. Dang, F. Ren, H. Cho, K. P. Lee, S. J. Pearton, J.-I. Chyi, T. E. Nee, C. M. Nee, and C. C. Chuo, IEEE Trans. Electron Devices, 48, 407(2001) https://doi.org/10.1109/16.906427
  7. R. Ren, A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, S. J. Pearton, J.-I. Chyi, C. M. Lee, and C. C. Chuo, Solid-State Electron, 44 619(1999) https://doi.org/10.1016/S0038-1101(99)00196-3
  8. A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, H. Cho, and S. J. Pearton, Appl. Phys. Lett. 76 3816(2000) https://doi.org/10.1063/1.126791
  9. A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, X.A. Cao, and S. J. Pearton, Appl. Phys. Lett. 76 1767(2000) https://doi.org/10.1063/1.126161
  10. T. G. Zhu, D. J. H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, and R. D. Dupuis, Appl. Phys. Lett. 77 2918(2000) https://doi.org/10.1063/1.1322050
  11. J. W. Johnson, J. R. LaRoche, F. Ren, B. P. Gila, M. E. Overberg, C. R. Abernathy, J.-I. Chyi, C. C. Chuo, T. E. Nee, C. M. Lee, K. P. Lee, S. S. Park, Y. J. Park, and S. J. Pearton, Solid-State Electron., 45 405(2001) https://doi.org/10.1016/S0038-1101(01)00059-4
  12. J. W. Johnson, A. P. Zhang, W.-B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, J.-I. Chyi, IEEE Trans. Electron. Dev. 49 32(2002) https://doi.org/10.1109/16.974745
  13. S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, C. Mary, R. D. Schrimpf, J. C. Keay, K. F. Galloway, IEEE Trans. Electron. Dev. 47 304(2000) https://doi.org/10.1109/16.822272
  14. B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, D. Schoenfeld, and A. G. Baca, Appl. Phys. Lett. 80 604(2002) https://doi.org/10.1063/1.1445809
  15. Jihyun Kim, S. Nigam, D. Schoenfeld, G. Y. Chung, and S. J. Pearton, Electrochem. Solid-State Lett. 6 G303(2003)
  16. A. Zeitouny, M. Eizenberg, S. J. Pearton, and F. Ren, J. Appl. Phys. 88 2048(2000) https://doi.org/10.1063/1.1305834
  17. Jihyun Kim, F. Ren, A. G. Baca and S. J. Pearton, Appl. Phys. Lett. 82 3263(2003) https://doi.org/10.1063/1.1576506
  18. B. J. Baliga, Power Semiconductor Devices(PWS Publisher, Boston, 1996)