• 제목/요약/키워드: $O_2$ Plasma treatment

검색결과 523건 처리시간 0.03초

Electrical Characteristics of Carbon Nanotubes by Plasma and Microwave Surface Treatments

  • Cho, Sang-Jin;Shrestha, Shankar Prasad;Lee, Soon-Bo;Boo, Jin-Hyo
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.905-907
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    • 2014
  • The plasma and microwave surface treatments of carbon nanotubes that loaded on plastic substrates were carried out with expecting a change of carbon nanotube dispersion by increasing treatment time. The microwave treatment process was undergone by commercial microwave oven (800 W). The electrical property was measured by hall measurement and resistance was increased by increasing $O_2$ flow rate of plasma, suggesting an improvement of carbon nanotube dispersion and a possibility of controlling the resistances of carbon nanotubes by plasma surface treatment. The resistance was increased in both polyethylene terephthalate and polyimide substrates by increasing $O_2$ flow rate. Resistance changes only slightly with different $O_2$ flow treatment in measure rho for all polyimide samples. Sheet resistance is lowest in polyimide substrate not due to high carbon nanotube loading but due to tendency to remain in elongated structure. $O_2$ or $N_2$ plasma treatments on both polyethylene terephthalate and polyimide substrates lead to increase in sheet resistance.

Surface treatment of sol-gel bioglass using dielectric barrier discharge plasma to enhance growth of hydroxyapatite

  • Soliman, Islam El-Sayed;Metawa, Asem El-Sayed;Aboelnasr, Mohamed Abdel Hameed;Eraba, Khairy Tohamy
    • Korean Journal of Chemical Engineering
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    • 제35권12호
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    • pp.2452-2463
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    • 2018
  • Surface treatment of sol-gel bioglass is required to increase its biomedical applications. In this study, a dielectric barrier discharge (DBD) plasma treatment in atmospheric pressure was performed on the surface of [$SiO_2-CaO-P_2O_5-B_2O_3$] sol-gel derived glass. The obtained bioglass was treated by plasma using discharge current 12 mA with an exposure period for 30 min. The type of discharge can be characterized by measuring the discharge current and applied potential waveform and the power dissipation. Apatite formation on the surface of the DBD-treated and untreated samples after soaking in simulated body fluid (SBF) at $37^{\circ}C$ is characterized by Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), inductively coupled plasma (ICP-OES) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS). We observed a marked increase in the amount of apatite deposited on the surface of the treated plasma samples than those of the untreated ones, indicating that DBD plasma treatment is an efficient method and capable of modifying the surface of glass beside effectively transforming it into highly bioactive materials.

플라즈마 표면처리가 TiO2/TiO2-x 저항 변화형 메모리에 미치는 영향 (Effect of Plasma Treatment on TiO2/TiO2-x Resistance Random Access Memory)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.454-459
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    • 2020
  • In this study, a TiO2/TiO2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO2/TiO2-x-based ReRAM was evaluated by applying RF power to the TiO2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

Improvement of Interfacial Performances on Insulating and Semi-conducting Silicone Polymer Joint by Plasma-treatment

  • Lee, Ki-Taek;Huh, Chang-Su
    • Transactions on Electrical and Electronic Materials
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    • 제7권1호
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    • pp.16-20
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    • 2006
  • In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

Surface modification for block copolymer nanolithographyon gold surface

  • 황인찬;방성환;이병주;이한보람;김형준
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.33.2-33.2
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    • 2009
  • Block copolymer lithography has attracted great attention for emerging nanolithography since nanoscaleperiodic patterns can be easily obtained through self-assembly process without conventional top-down patterning process. Since the morphologies of self-assembled block copolymer patterns are strongly dependent on surface energy of a substrate, suitable surface modification is required. Until now, the surface modification has been studied by using random copolymer or self-assembled mono layers (SAMs). However, the research on surface modifications has been limited within several substrates such as Si-based materials. In present study, we investigated the formation of block copolymer on Au substrate by $O_2$ plasma treatment with the SAM of 3-(p-methoxy-phenyl)propyltrichloro-silane [MPTS, $CH_3OPh(CH_2)_3SiCl_3$]. After $O_2$ plasma treatment, the chemical bonding states of the surface were analyzed by X-ray photoelectron spectroscopy (XPS). The static contact angle measurement was performed to study the effects of $O_2$ plasma treatment on the formation of MPTS monolayer. The block copolymer nanotemplates formed on Au surface were analyzed by scanning electron microscopy. The results showed that the ordering of self-assembled block copolymer pattern and the formation of cylindrical nano hole arrays were enhanced dramatically by oxygen plasma treatment. Thus, the oxidation of gold surface by $O_2$ plasma treatment enables the MPTS to form the monolayer assembly leading to surface neutralization of gold substrates.

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플라즈마 종합에 의해 제조된 복합막에 대한 $O_{2}/N_{2}$의 기체투과 특성 (The Permeation Characteristics of $O_{2}/N_{2}$ Gas for Composite Membrane Prepared by Plasma Polymerization)

  • 현상원;정일현
    • 환경위생공학
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    • 제13권2호
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    • pp.147-155
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    • 1998
  • In this study, we prepared non-porous plasma membrane for having high permeability and selectivity and this membrane was deposited on the $Al_{2}O_{3}$ membrane by using $CHF_{3}$ & $SiH_{4}$ monomer. Also, we investigated for the permeation characteristics of the plasma polymer membrane by Ar plasma treatment. When the position of substrate was near cathode, the selectivity was increased with Ar plasma treatment time and rf-power. The pore size of $Al_{2}O_{3}$ membrane had an effect on the permeability and the position of substrate affected selectivity.

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$H_2$ plasma treatment effects on electrical and optical properties of the BZO (ZnO:B) thin films

  • Yoo, Ha-Jin;Son, Chan-Hee;Choi, Joon-Ho;Kang, Jung-Wook;Cho, Won-Tae;Park, Sang-Gi;Lee, Yong-Hyun;Choi, Eun-Ha;Cho, Guang-Sup;Kwon, Gi-Chung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.309-309
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    • 2010
  • We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

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졸-겔법에 의한 기공 충전이 플라즈마 용사된 $Ce_0.8Gd_0.2O_2$ 전해질체의 물리 및 전기적 성질에 미치는 영향 (The Effect of Porosity Sealing by Sol-gel Method on Physical and Electrical )Properties of a Plasma Sprayed $Ce_0.8Gd_0.2O_2$ Electrolyte)

  • 유석원;김장엽;김호무;김병호;임대순
    • 한국세라믹학회지
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    • 제36권11호
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    • pp.1205-1210
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    • 1999
  • Ceria based electrolytes were fabricated by a plasma spraying method. The porosity which was crated during the plasma spraying process was infiltrated with Ce0.8Gd0.2O2 sol by ultrasonic treatment and heat treatment at 90$0^{\circ}C$ in order to improve physical and electrical properties. The porosity decreased from 9.8% to 6.5% and gas permeability at 80$0^{\circ}C$ decreased from 16.7$\times$10-3 to 5.7$\times$10-3 cm3(STP)/cm2.s.cmHg as the number of treatment increased 10 cycles. The ionic conductivity was also increased about 30% after 10 times of sealing.

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게이트 절연막의 $O_2$플라즈마 처리에 의한 펜타센 OTFT의 성능 개선 (Performance Enhancement due to Oxygen Plasma Treatment on the Gate Dielectrics of OTFTs)

  • 이명원;김광현;허영헌;안정근
    • 대한전자공학회논문지SD
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    • 제40권7호
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    • pp.494-498
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    • 2003
  • 펜타센 유기박막트랜지스터(OTFT)에서 게이트 절연막의 표면상태가 소자의 성능에 큰 영향을 미친다. 본 논문에서는 펜타센을 진공 증착하기전 게이트 절연막의 표면에 O₂플라즈마 처리를 함으로써 OTFT의 성능에 미치는 영향을 분석하였다. O₂플라즈마 처리 후 소자의 전계 이동도가 0.05㎠/V·sec로 나타났으며, 이는 처리전 보다 약 10배정도 향상된 것이다. 또한 O₂플라즈마 처리는 게이트 절연막의 표면상태를 균일하게 하여 각 성능지수들의 표준편차가 감소하였다. 그리고 전계 이동도는 O₂플라즈마에 노출되는 시간에 따라 증가하였는데 5분을 기점으로 다시 감소하였다. 따라서 O₂플라즈마 처리시간은 5분이 최적인 것으로 판단된다.

Radio Frequency Plasma Power변화에 따른 ITO 특성 및 OLED의 광학적 특성 (Optical Properties of Organic Light Emitting Diode and Characteristics of ITO by Variation of Radio Frequency Plasma Power)

  • 기현철;김회종;홍경진;김은미;구할본
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.81-85
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    • 2009
  • We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.