Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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$H_2$ plasma treatment effects on electrical and optical properties of the BZO (ZnO:B) thin films

  • Yoo, Ha-Jin (Department of Electrophysics, Kwangwoon University) ;
  • Son, Chan-Hee (Department of Electrophysics, Kwangwoon University) ;
  • Choi, Joon-Ho (Department of Electrophysics, Kwangwoon University) ;
  • Kang, Jung-Wook (Department of Electrophysics, Kwangwoon University) ;
  • Cho, Won-Tae (Thin Film Team, Jusung Engineering Co., Ltd.) ;
  • Park, Sang-Gi (Thin Film Team, Jusung Engineering Co., Ltd.) ;
  • Lee, Yong-Hyun (Thin Film Team, Jusung Engineering Co., Ltd.) ;
  • Choi, Eun-Ha (Department of Electrophysics, Kwangwoon University) ;
  • Cho, Guang-Sup (Department of Electrophysics, Kwangwoon University) ;
  • Kwon, Gi-Chung (Department of Electrophysics, Kwangwoon University)
  • Published : 2010.08.18
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Abstract

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

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