대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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게이트 절연막의 $O_2$플라즈마 처리에 의한 펜타센 OTFT의 성능 개선

Performance Enhancement due to Oxygen Plasma Treatment on the Gate Dielectrics of OTFTs

  • 이명원 (동아대학교 전기전자컴퓨터공학부) ;
  • 김광현 (동아대학교 전기전자컴퓨터공학부) ;
  • 허영헌 (동아대학교 전기전자컴퓨터공학부) ;
  • 안정근 (동아대학교 전기전자컴퓨터공학부)
  • 발행 : 2003.07.01
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⟨ 이전 논문 다음 논문 ⟩

초록

펜타센 유기박막트랜지스터(OTFT)에서 게이트 절연막의 표면상태가 소자의 성능에 큰 영향을 미친다. 본 논문에서는 펜타센을 진공 증착하기전 게이트 절연막의 표면에 O₂플라즈마 처리를 함으로써 OTFT의 성능에 미치는 영향을 분석하였다. O₂플라즈마 처리 후 소자의 전계 이동도가 0.05㎠/V·sec로 나타났으며, 이는 처리전 보다 약 10배정도 향상된 것이다. 또한 O₂플라즈마 처리는 게이트 절연막의 표면상태를 균일하게 하여 각 성능지수들의 표준편차가 감소하였다. 그리고 전계 이동도는 O₂플라즈마에 노출되는 시간에 따라 증가하였는데 5분을 기점으로 다시 감소하였다. 따라서 O₂플라즈마 처리시간은 5분이 최적인 것으로 판단된다.

In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The Plasma treatment produced the mobility of 0.05$\textrm{cm}^2$/V.sec which is 10 times larger than the non-treated. The resistance was also reduced from 400K$\Omega$ to 50K$\Omega$. In addition, the standard deviation of performance parameters variation was reduced with the plasma exposure time, which implies that plasma treatment makes the gate surface states be uniform across the whole wafer area. The performance parameters were increased with the exposure time up to 5min, after which they degraded again. Therefore, the optimal exposure time was found to be 5min.

키워드

참고문헌

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