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http://dx.doi.org/10.4313/JKEM.2009.22.1.081

Optical Properties of Organic Light Emitting Diode and Characteristics of ITO by Variation of Radio Frequency Plasma Power  

Ki, Hyun-Chul (한국광기술원 광소자팀)
Kim, Hwe-Jong (한국광기술원 광소자팀)
Hong, Kyung-Jin (광주대학교 광통신공학과)
Kim, En-Mei (전남대학교 전기공학과)
Gu, Hal-Bon (전남대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.1, 2009 , pp. 81-85 More about this Journal
Abstract
We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.
Keywords
RF power; ITO; Surface treatment; Organic light emitting diode;
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