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Performance Enhancement due to Oxygen Plasma Treatment on the Gate Dielectrics of OTFTs  

이명원 (동아대학교 전기전자컴퓨터공학부)
김광현 (동아대학교 전기전자컴퓨터공학부)
허영헌 (동아대학교 전기전자컴퓨터공학부)
안정근 (동아대학교 전기전자컴퓨터공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.7, 2003 , pp. 494-498 More about this Journal
Abstract
In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The Plasma treatment produced the mobility of 0.05$\textrm{cm}^2$/V.sec which is 10 times larger than the non-treated. The resistance was also reduced from 400K$\Omega$ to 50K$\Omega$. In addition, the standard deviation of performance parameters variation was reduced with the plasma exposure time, which implies that plasma treatment makes the gate surface states be uniform across the whole wafer area. The performance parameters were increased with the exposure time up to 5min, after which they degraded again. Therefore, the optimal exposure time was found to be 5min.
Keywords
Pentacene; Plasma; Mobility;
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