• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.36-40
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• 2018

We have developed a nonlithographic patterning technique using polystyrene nanoparticles to form nanonet channel structures which is promising for high-performance TFT applications. Nanoparticles assisted patterning (NAP) is a technique to form uniform nano-patterns by applying lift-off and dry etch process. Oxygen plasma treatment was used to control the diameters of nanonet hole size to realize a branch width down to 100 nm. NAP technology can be very promising to fabricate nanonet structure with advantages of lower manufacturing cost and large-area patterning capability.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.195-199
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• 2010

The reversible chemical absorption using MEA (monoethanolamine), one of alkanolamine, is generally used as a conventionally method for $CO_{2}$ capture. Even MEA absorbent has excellent reactivity with $CO_{2}$, it has been known to have the decrease of absorption capacity caused by $CO_{2}$, $O_{2}$ or other acid gases in flue gas, corrosion and thermal degradation. In this study, MEA solutions degraded in the steam reforming process of refinery used and the absorption performance were compared for the used of conventional MEA solution. In case of 30 wt% MEA and mixture of 20 wt% thermal degraded absorbent (DP) and 10 wt% PZ, the absorption capacities were $0.5365mol-CO_{2}$/mol-absorbent and $0.5939mol-CO_{2}$/mol-absorbent respectively. PZ added thermally degraded absorbent showed the enhanced absorption capacity. On the contrary, the absorption rates were $1.1610kg_{f}/cm^2{\cdot}min$ for 30 wt% MEA, $0.5310kg_{f}/cm^2{\cdot}min$ for mixture of 20 wt% thermal degraded absorbent (DP) and 10 wt% PZ and $0.3525kg_{f}/cm^2{\cdot}min$ for 30 wt% thermally degraded absorbent only. The absorption rates of PZ added thermally degraded absorbent was higher than that of thermally degraded absorbent only. Therefore, it can be confirmed that thermally degraded absorbent can be reused as an absorbent for $CO_{2}$ by the addition of suitable additives.

• Polymer(Korea)
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• v.32 no.5
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• pp.465-469
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• 2008

Hybrid thin films composed of block copolymer(BCP) and $TiO_2$ with various morphologies on the nanoscale were fabricated using self-assembly of block copolymer combined with sol-gel process. The factors governing morphology changes considered in this study are block copolymer composition, selectivity of solvent and the inclusion of an additive. We also investigated the efficiency of photoluminescence for selected films with different morphologies. Micelle or nanowire structure can be derived from the self-assembly of poly (styrene-block-4-vinyl pyridine) (PS-b-P4VP) depending on the relative selectivity of the solvent for the two blocks, and the titanium tetraisopropoxide ($Ti{OCH (CH_3)_2}_4$, TTIP) is coordinated with nitrogen in P4VP block. Addition of a third component 3-pentadecylphenol into the BCP/sol-gel mixture solution induces morphology change as a result of the change of relative volume fraction of the BCP. We confirmed that the efficiency of $TiO_2$ fluorescence changes for films depending on morphologies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.1-6
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• 2005

A dual-level low voltage differential signalling (DLVDS) circuit is proposed aiming at reducing transmission lines for LCD driver IC. In the proposed circuit, we apply a couple of primitive data to DLVDS circuit as inputs. The transmitter converts two inputs to two kinds of fully differential level signals. In this circuit, two transmission lines are sufficient to transfer two primitive inputs while keeping the LVDS feature. The receiver recovers The original input data through a level decoding circuit. We fabricated the proposed circuit using $0.25\mu m$ CMOS technology. The resultant circuit shows 1-Gbps/2-line data rate and 35-mW power consumption at 2.5V supply voltage, respectively.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.5
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• pp.528-532
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• 2007

The generation of high-purity hydrogen from hydrocarbon fuels is essential for efficient operation of fuel cell. In general, most feasible strategies to generate hydrogen from hydrocarbon fuels consist of a reforming step to generate a mixture of $H_2$, CO, $CO_2$ and $H_2O$(steam) followed by water gas shift(WGS) and CO clean-up steps. The WGS reaction that shifts CO to $CO_2$ and simultaneously produces another mole of $H_2$ was carried out in a two-stage catalytic conversion process involving a high temperature shift(HTS) and a low temperature shift(LTS). In the WGS operation, gas emerges from the reformer is taken through a high temperature shift catalyst to reduce the CO concentration to about $3\sim4%$ followed to about 0.5% via a low temperature shift catalyst. The WGS reactor was designed and tested in this study to produce hydrogen-rich gas with CO to less than 0.5%.

• Resources Recycling
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• v.18 no.5
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• pp.19-25
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• 2009

Molybdenite concentrate ($MoS_2$) is the major mineral for the molybdenum industry, of which the industrial processing is first converted to technical grade molybdenum trioxide ($MoO_3$) by its oxidative roasting and purification, used as a raw material for manufacturing several molybdenum compounds. In the present work, detailed experimental results for the oxidative roasting of low grade Mongolian molybdenite concentrate are presented. The experiments were carried out in the temperature range of 793 to 823 K under an oxygen partial pressure range of 0.08 atm to 0.21 atm by using a thermogravimetric analysis technique. The molybdenite concentrate was an average particle size of $67\;{\mu}m$. In the oxidative roasting of low grade Mongolian molybdenite concentrate, more than 95% of molybdenite was converted to molybdenum trioxide in 60 min. at 828 K. The lander equation was found to be useful in describing the rates of the oxidative roasting and the reaction order with respect to oxygen concentration in a gaseous mixture with nitrogen was 0.11 order.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.211-219
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• 2001

This paper describes a read-only CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage using the magnetic field generated from a reader. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit which has almost constant damping rate under the variations of the distance between the transponder and the reader has been employed for impedance modulation. The designed circuit has been fabricated using a 0.65${\mu}{\textrm}{m}$2-poly, 2-metal CMOS process. Die area is 0.9mm$\times$0.4mm. Measurement results show that it has a constant damping rate of around 20~25% and a data transmission rate of 3.9kbps at a 125KHz RF carrier. The power required for reading operation is about 100㎼. The measured reading distance is around 7cm.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• Korean Journal of Soil Science and Fertilizer
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• v.39 no.6
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• pp.409-414
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• 2006

Sulfur-oxidizing bacteria were enumerated and isolated from a steady-state anaerobic master culture reactor (MCR) operated for over six months under a semi-continuous mode and nitrate-limiting conditions using thiosulfate as an electron donor. Most are Gram-negative bacteria, which have sizes up to 12 m. Strains AD1 and AD2 were isolated from the plate count agar (PCA), and strains BD1 and BD2 from the solid thiosulfate/nitrate medium. Based on the morphological, physiological, FAME and 16S rDNA sequence analyses, the two dominant strains, AD1 and AD2, were identified as Paracoccus denitrificans and Paracoccus versutus (formerly Thiobacillus versutus), respectively. From the physiological results, glucose was assimilated by both strains AD1 and AD2. Heterotrophic growth of strains AD1 and AD2 could be a more efficient way of obtaining a greater amount of biomass for use as an inoculum. Even though facultative autotrophic bacteria grow under heterotrophic conditions, autotrophic denitrification would not be reduced.