Journal of Korean Vacuum Science & Technology
한국진공학회 (The Korean Vacuum Society)
- 반년간
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- 1226-6167(pISSN)
과학기술표준분류
- 물리학 > 광학
Aim & Scope
1. 진공기술 2. 표면 및 계면과학 3. 플라즈마 및 디스플레이 4. 반도체 및 박막 5. 나노 및 바이오인터페이스 6. 에너지기술
제3권1호
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This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.
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Using micro-wells on the Mo substrate, we could obtain various tubular-volcano-types of free-standing diamond field emitters by depositing a diamond film detaching the film and turning the film upside down. The field emission characteristics of these structures were investigated as a function of size, shape and the number density of the tubular-volcano-type diamond field emitters. The field emission characteristics, especially the current density, were greatly enhanced with increasing the number density of the tubular-volcano-type diamond field emitters on the Mo substrate. Based on these results, we suggest that the reduction of the well size can give better field emission characteristics by the increase in the number density of the tubular-volcano-type diamond field emitters. Finally, we suggest the feasibility of fabricating a large-area field emission display using our patterned tubular-volcano-type free-standing diamond field emitters.
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Deposition of parylene (PA) films has been explored at substrate temperatures below 2
$0^{\circ}C$ and pressures below 4 torr. The film thickness was measured using AFM and the film thickness measured was 3,500-12,000$\AA$ and the growth rate was 20-70$\AA$ /min. T도 dielectric constant of the deposited PA films was found to be 2.66 and the dielectric strength was in excess of 2$\times$ 105V/cm. The growth rate became a maximum at a precursor decomposition temperature of$600^{\circ}C$ . It was found that the growth rate decreased with increasing substrate temperature, whereas it increased with increasing pressure. At a precursor decomposition temperature of 75$0^{\circ}C$ or at a deposition pressure above 1 Torr the film surface became rough due to particle formation in the gas phase. The condensation of a p-xylylene monomer on the substrate surface turned out to be a rate-limiting step in the growth of the PA films. -
The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.
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Electron beam trajectory simulation results on the high voltage FED with cone-type field emitters predict that the cross-talk phenomena would be seen due to the divergence of the electron beam. In this study, computer simulations with design of experiment technique and the SNU-FEAT program were carried out for five input parameters of the aperture focusing structure. The results tell that the focusing voltage is a dominant factor. And, the beam divergence index could be reduced to 10.7
$\mu\textrm{m}$ with the aperture focusing structure, however, the operating voltage of the field emitter is predicted to increase by 40% maximum. -
Song, Yoon-Ho;Lee, Jin-Ho;Kang, Seung-Youl;Park, Sng-Yool;Suh, Kyung-Soo;Park, Mun-Yang;Cho, Kyoung-Ik 33
We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25$\times$ 25 pixels in which polycrystalline silicon fie이 emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolityically intergrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-stage currents even though at high drain voltages. The intergrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25V. With the prototype AMFED we have displayed character patterns by low-boltage pertipheral circuits of 15 V in a high vacuum chamber. -
Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92
${\mu}$ A/triode over 90 hours, a small gate leakage current of 0.23${\mu}$ A/triode and an outstanding transconductance of 57${\mu}$ S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end. -
Using microwave plasma-enhanced chemical vapor deposition, diamond films were successfully grown on Ti-coated glass substrates at temperatures as low as around 500
$^{\circ}C$ in behalf of practical applications to field emitters. Electron emission was observed at turn-on fields below 18V-$\mu\textrm{m}$ . Field emission characteristics of diamond films were discussed in terms of their crystalline qualities. diamond films with poorer crystalline qualities showed better field emission properties. -
We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/
$\mu\textrm{m}$ . It was found that the hydrogen-free DLC has a stable electron emitting property. -
We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.
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There has been an interest to develop an efficient, compact microwave device using field-emitter-arrays (FEA)-based cathode. Toe valuate the optimum device-efficiency in a compact size, the propagation properties of the premodulated electron beam for the FEA-based cathode is studied in detail by the computer simulation using a PIC code, MAGIC. For the premodulated electron beam whose phase of the energy leads the phase of the current by
$\pi$ /2, the amplitude of the downstream current modulation can be kept as high as the initial modulation level. Using the beam parameters with the beam voltage of 6kV and the current of 2.0A, 30% of efficiency is predicted when the quality factor of 800 is chosen. the device length is reduced about twice compared with that of the conventional device. The design of practical planar cathode is carried out to meet the minimum diameter of the electron beam as 0.5 mm. -
In this paper, the design of one-chip FED system integrated with driving circuits in reported on the basis of MOSFET controlled FEA (MCFEA). To integrate a MOSFET with a FEA efficiently, a new fabrication process is proposed. It is confirmed that the MOSFET with threshold voltage of about 2volts controls the FEA emission current up to 20
${\mu}$ A by applying driving voltage of 15 volts, which is enough current level to utilize the MCFEA as a pixel for FED. The drain breakdown voltage of the MOSFET is measured to be 70 volts, which is also high enough for 60 volt operation of FED. The circuits for row and column driver are designed stressing on saving area, reducing malfunction probability and consuming low power to maximize the merit of on-chip driving circuits. Dynamic logic concept and bootstrap capacitors are used to meet these requirements. By integrating the driving circuit with FEA, the number of external I/O lines can be less than 20, irrespectively of the number of pixels. -
For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1
${\mu}{\textrm}{m}$ ) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$ 10-5 Torr to 1$\times$ 10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation. -
the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400
$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel. -
FDE panel was successfully fabricated through the integration of a 0.7" diagonal Si-based Mo-tip FEA with 25
${\times}$ 25 pixels, Y2O3:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system was driven by an external driver circuit having pulse width modulation(PWM) driving scheme. Before character imaging, it was stabilized through tip aging by slowly increasing a pulse-mode emission current and phosphor aging by a coulombic charging process. After aging, luminescent characteristics such as emission uniformity, charging and arcing phenomena were shown to be improved significantly. -
Field Emission display (FEDs) require enhancement in both driving methods and process techniques to improve the display image quality. However, from the point of view of manufacturing, it is difficult to find methods and techniques to realize low cost manufacturing. New and simple color phosphor screen designs were suggested with non-crossed electrode lines and full color anode panels for small area displays were demonstrated. To avoid unwanted reaction with gases produced from phosphors in a high vacuum glass container, a very thin polyimide layer was coated on the phosphor screen. Moreover, to improve the display image quality, black matrix composed of inorganic materials was fabricated. This paper describes the performance and characteristics of the new full color anode panels.
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A 3.12" FED panel was packaged successfully using the anode plate on which phosphors and black matrix were coated and cathode plate containing emitter arrays. The vacuum level of the panel was investigated during panel evacuation, tip-off and getter activation process. The packaged panel exhibited vacuum level below 2
${\times}$ 10-6 Torr. Similar experiments were carried out for 10" panel made of bare plates. In addition, the vacuum level of two panels was compared continuously after tip off process; one with the getter and the other without it.