Kang, Tae Won;Lee, Jae Jin;Kim, Young Ham;Kim, Jin Hwang;Kim, Bong Ryul
376
In this paper, we show that the growth rate of MBE GaAs epitaxial layer is controlled entirely by the flux density of the Ga beam, impinging on the substrate surface, and is linearly proportional to the Ga effusion cell temperature and the growth time. According to our investigation of the epitaxial layer surfvace through RHEED, AES, SIMS and SEM, if the growth temperature is maintained above 590\ulcorner, the surface crystal structure, flathness and stoichiometry become significantly enhanced, and the epilayer surface has a smooth mirror-like appearance.