The Resistivity Modeling of Ion Implanted Polycrystalline Silicon

이온주입에 의한 다결정 실리콘의 고유저항 모델링

  • Park, Jong Tae (Dept. Elec. Eng., Yonsei Univ.) ;
  • Lee, Moon Key (Dept. Elec. Eng., Yonsei Univ.) ;
  • Kim, Bong Ryul (Dept. Elec. Eng., Yonsei Univ.)
  • 박종태 (연세대학교 전자공학과) ;
  • 이문기 (연세대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1986.03.01

Abstract

In this paper, modeling of the conduction mechanism of ion implanted p-type polycrystalline silicon is studied. From this modeling, the resistivity of p-type polycrystalline and its dependence on dopant concentration are calculated. The proposed modeling whose grain size is about 1450 \ulcorneris shwon to agree well with the experimental result.

Keywords