대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

반도체 웨이퍼의 오존 수(水) 세정을 위한 고농도 오존발생장치 특성 연구

A Study on the Characteristics of the High Concentration Ozone Generator for the Semiconductor Wafer Cleaning with the Ozone Dissolved De-ionized Water

  • 손영수 (한국기계연구원 첨단산업기술연구부) ;
  • 함상용 (한국기계연구원 첨단산업기술연구부) ;
  • 문세호 (세왕 CET㈜)
  • 발행 : 2003.12.01
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초록

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

키워드

참고문헌

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