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Electrical Properties of SBT Capacitors with Top Electrodes  

조춘남 (원광대 전기공학과)
오용철 (원광대 전기공학과)
김진사 (원광대 전기공학과)
정일형 (원광대 전기공학과)
신철기 (원광대 전기공학과)
최운식 (대불대 전기공학과)
김충혁 (원광대 전기공학과)
이준웅 (원광대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.12, 2003 , pp. 553-558 More about this Journal
Abstract
The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.
Keywords
RF sputter; top electrodes; remanent polarization; coercive electric field; dielectric constant;
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