This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

In this paper, a novel optical measuring system for the measurement of nonuniform electric field was proposed. The electric field distorted by the discharges was detected through proposed optical measuring system based on the Pockets effect and Mach-Zehnder interferometer. In order to produce distorted electric field, corona discharge was generated from needle-plane electrode in air and detected by optical measuring system. This optical measuring system is constructed by He-Ne laser, single mode optical fiber, $2{\times}2$ 50/50 beam splitter, $LiNbO_3$ Pockets cell, photo detector and PC. In this system, output signal of Pockels sensor is measured by digital oscilloscope and transferred to the PC for recording and statistical processing. Through this paper, a promising possibilities of proto-type optical measuring system were evinced.

This paper describes the acoustic emission measurement method to diagnose GIS for particles. We measured and analyzed the signals of acoustic waves using acoustic two types sensors with 125KHz and 50KHz resonant frequency respectively when the particles were dropped on the surfaces of circular plates and inside of GlS tanks. We found that the difference between peak outputs of two sensors depended on the types and materials of particles and the conditions of dropping position. These results showed that the outputs of 125KHz sensor were higher than those of 50KHz sensor in circular plate and 362㎸ GIS tank made of steel and vice versa in circular plate and 800㎸ GIS tank made of aluminum. The ratios outputs of 125KHz sensor to those of 50KHz sensor were 1.4 - 2.37 in 800㎸ GIS tank and were 0.5 - 1.0 in 362㎸ GIS tank. Therefore we knew that adaption of two types acoustic sensors which had different resonant frequencies as a very useful method in diagnosis of GIS.

This paper deals with the effects of grounding conductors for metal oxide surge arresters. When surge arresters are improperly installed, the results can cause costly damage of electrical equipments. In particular, the route of surge arrester connection is very important because bends and links of leads increase the impedances to lightning surges and tend to nullify the effectiveness of a grounding conductor. Therefore, there is a need to know how effective installation of lightning surge arresters is made in order to control voltage and to absorb energy at high lightning currents. The effectiveness of a grounding conductor and 18 [㎸] metal oxide distribution line arresters was experimentally investigated under the lightning and oscillatory impulse voltages. Thus, the results are as follows; (1) The induced voltage of a grounding conductor is drastically not affected by length of a connecting line, but it is very sensitive to types of grounding conductor. (2) The coaxial cable having a low characteristic impedance is suitable as a grounding conductor. (3) It is also clear from these results that bonding the metal raceway enclosing the grounding conductor to the grounding electrode is very effective because of skin effect. (4) The induced voltages of grounding conductors for the oscillatory impulse voltages are approximately twice as large as those for the lightning impulse voltages.

We developed LD Pumped Nd:$VVO_4$ microchip laser with the cavity length of 1mm. The microchip laser output was 87.5㎽ at the wavelength of 1063.9nm with the input power of 241㎽ at the wavelength of 809nm. The slope efficiency was 40.7% and the threshold input power was 31.1㎽. We have also defined input power limit for the single longitudinal mode operation theoretically. It was 2.5 times larger than that of threshold input intensity. According to the results of simulation, the Nd:YVO$_4$ microchip laser can be operated with the maximum output of 15㎽ for the single longitudinal mode up to the input power of 77.75㎽.

The determination of DNA hybridization reaction can apply the molecular biology research, clinic diagnostics, bioengineering, environment monitoring, food science and application area. So, the improvement of DNA hybridization detection method is very important for the determination of this hybridization reaction. Several molecular biological techniques require accurate predictions of matched versus mismatched hybridization thermodynamics, such as PCR, sequencing by hybridization, gene diagnostics and antisense oligonucleotide probes. In addition, recent developments of oligonucleotide chip arrays as means for biochemical assays and DNA sequencing requires accurate knowledge of hybridization thermodynamics and population ratios at matched and mismatched target sites. In this study, we report the characteristics of the probe and matched, mismatched target oligonucleotide hybridization reaction using thermodynamic method. Thermodynamic of 5 oligonucleotides with central and terminal mismatch sequences were obtained by measured UV-absorbance as a function of temperature. The data show that the nearest-neighbor base-pair model is adequate for predicting thermodynamics of oligonucleotides with average deviations for $\Delta$H$^{0}$ , $\Delta$S$^{0}$ , $\Delta$G$_{37}$ $^{0}$ and T$_{m}$, respectively.>$^{0}$ and T$_{m}$, respectively.

In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.