This paper presents a method to minimize the initial deflection of a multi-layer piezoelectric microactuator without loosing its piezoelectric deflection performance required for light modulating micromirror devices. The multi-layer piezoelectric actuator composed of PZT silicon nitride and platinum layers deflects or buckles due to the gradient of residual stress. Based on the structural analysis results and relationship between process conditions and mechanical properties we have modified the fabrication process and the thickness of thin film layers to reduce the initial residual stress deflection without decreasing its piezoelectric deflection performance. The modified designs fabricated by surface-micromachining process achieved the 77% reduction of the initial deflection compared with that of the conventional method based on the measured micromechanical material properties is applicable to the design refinement of multi-layer MEMS devices and micromechanical structures.

In this paper in order to evaluat quantitavely the formation mechanism of space charge and its effects on the conduction characteristics in LDPE we have carried out the numerical analysis on the basis of experimental results of space charge distribution cathode field and current with time which had been simultaneously measured at applied field of 50kV/mm and room temperature. As the models for numerical analysis we employ the Richarson-Schottky theory for charge injection from electrode into LDPE and the band-tail conduction at crystalline regions and the hopping conduction by traps which mainly exist at the interface regions of crystalline-amorphous region for charge transport in LDPE. Futhermore in order to investigate the influence of physical parameters on the time characteristcs of space charge distribution and measured current we have changed the values of trap density activation energies for charge injection and transport and have analyzed their effects.

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

Lightning impulse $(1.2/44[\mus])$ and damped oscillating impulse $(Osc./44[\mus])$ : 0.83[MHz]) breakdown characteristics in sulphur-hexafluoride/nitrogen (SF6-N2) mixtures were investigated. The predischarge currents were observed to clarify the breakdown mechanism. th experiments were carried out under nonuniform electric fields disturbed by a needle-shaped protrusion whose length and diameter are 10[mm] and 1[mm] at total gas pressure up to 0.5[MPa] with nitrogen concentrations varying from 5 to 20[%] in the mixture. The electrical breakdowns of SF6-N2 mixtures for both the positive and negative polarities develop with steplike pulses in leader mechanism and the breakdown voltage -time (V-t) characteristics were affected by the space charge. The voltage-time curves for the negative oscillating impulse voltage were extended over the longer time range. The minimum breakdown voltages for the negative lightning and oscillating impulse voltage were higher than those for the positive ones. in particular the positive breakdown voltages were independent of the gas pressure.

We propose a pulsed $CO_2$laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantages of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5 Hz to 60 to Hz control laser output. In this laser a low voltage open loop control for high voltage pulse discharge circuit is employed to aviod the Hv sampling or switching and high voltage leakage transformer is used to convert low voltage pulse rectified from AC to high voltage one. A ZCS(Zero Crossing Switch) circuit and a PIC(programble one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leadkage inductance. The maximum laser output was about 23 W at pulse repetition rate of 60Hz total gas mixture of $CO_2$ : $N_2$ : He=1: 9: 15 and total pressure of 18 Torr

A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.