The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Annealing Effect on the Photoluminescence of Si Nanocrystallites Thin Films

후열처리에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구

  • 전경아 (연세대학 전기전자공학과) ;
  • 김종훈 (연세대학 전기전자공학과) ;
  • 최진백 (연세대학 전기전자공학과) ;
  • 이상렬 (연세대학 전기전자학과)
  • Published : 2002.06.01
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Abstract

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

Keywords

References

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