The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.

The design and manufacture of injection-molded parts with desired properties is a costly process dominated by empiricism, Including the repeated modification of actual tooling. The objective of this study is to obtain the good design of injection-molded polymeric parts using axiomatic design approach.

Effect of Co substitution on crystal structures of two nickel silicides, NiSi and $NiSi_2$, is investigated by using an ab initio calculation. Relaxed NiSi and $NiSi_2$ structures are calculated and the calculated lattice parameters are in good agreement with experimentally determined lattice parameters within about 2%. A Co atom substitutes a Ni and Si site, respectively, to evaluate the preferable site between them. Co prefers Ni site to Si site in both NiSi and $NiSi_2$. The calculated total energy also indicates that the Co substitution to Ni site stabilizes both the NiSi and $NiSi_2$ structures. Co also prefers Ni site in $NiSi_2$ to that in NiSi, indicating that $NiSi_2$ becomes more stable than NiSi with Co substitution. As Co addition to NiSi improves its thermal stability experimentally, this indicates that the energy barrier between the two phases is high enough to prevent the phase transformation from NiSi to $NiSi_2$ up to high temperature.

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

Wavelet Transform is amenable to efficient algorithms. So wavelet transform was adopted many signal processing and communication applications. For example, the wavelet transform was adopted as the transform for JPEG2000. However, Wavelet has weakness about smoothness along the contours and limited directional information. Hence, recently, some new transforms have been introduced to take advantage of this property. So we use to other transform, called contourlet transform in compression. In this paper, we propose a new method for image compression based on the contourlet transform, which has been recently introduced. Contourlet transform has a good result about images with smooth contours. Moreover, Contourlet is feasible multiresolution and multidirection expansion using non-separable filter bank. This treatise shows a good image representation after compressing using contourlet transform.

V-groove device was fabricated for precision coupling of planar optical splitter and optical fibers. V-groove was made through select wet etching of Si wafer by using KOH solution. Etching rate and surface roughness were checked, changing KOH composition(10, 20, 30, 33, 40 wt.%) and etching temperature (50, 60, 70, $80^{\circ}C$) to fabricate V-groove device effectively. Etching rate was the fastest as $1.84\;{\mu}m/min$ in case of etching by 20 wt.% KOH on $80^{\circ}C$, surface roughness was the best in case of etching by 33 wt. % KOH on $80^{\circ}C$.

A method to focus the object in camera system by applying the Hill climb algorithm from optical lens moving device (VCM; Voice coil motor) is proposed. The focusing algorithm from VCM is focus on the object but in these criteria is a well-known drawback; the focus is good only at same distance objects but the focus is bad (blur image) at different distance objects because of the DOF (Depth of focus) or DOF (Depth of field) at the optical characteristic. Here, the new camera system that describes the Reflector of free curvature systems (or Diffractive Fresnel lens) and the partition of focusing window area is proposed. The method to improve the focus in all areas (different distance objects) is proposed by new optical system (discrete auto in-focus) using the Reflector of free curvature systems (or Diffractive Fresnel lens) and by applying the partition of all areas. The proposal is able to obtain good focus in all areas.