We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than 10%-20% of the channel resistance. To achieve the requirements, we should investigate a methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile.

Seam seal welding on the semiconductor package is a process for sealing the packages of semi-conductors, crystal parts, saw filters and oscillators with lid plate by seam welding. This paper presents the development process of automatic seam seal welding system. In this process, the process algorithm, high precision welding current control, design of welding head, high speed and high precision feeding mechanism and user interface process control program technologies are included.

In the case of a vibration sensitive equipment, it require a vibration free environment to provide its proper function. Especially, lithography and inspection device, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved Giga Class semi conductor wafers. This high technology equipments require very strict environmental vibration criteria in proportion to the accuracy of the manufacturing. In this paper, the dynamic analysis and modal test were performed to evaluate the dynamic properties of the constructing clean room structure. Based on these results, a structural dynamic modification(SDM) were required to satisfiy the vibration allowable limit for pression machine. Therefore, in order to improve the dynamic stiffness of clean room structure, the VSD system which can control the force applied on structure, were adopted and its utility were proved from dynamic test results of the improved structure after a modification work.

This paper presents a measurement system of mechanical property using dual servo system. There are many kinds of method to measure material properties such as tensile test, indention and bending test. It is highly required to measure the properties of nano-sized material and structure. However, It is need more accurate measurement system, more stable and frequency response than conventional test. In this paper, we designed the dual servo system for a measuring instrument The dual servo system consisting of a coarse stage and a fine motion stage with VCM and PZT is proposed. Mechanical mechanism is designed with the leaf spring type of flexure hinge joint. Lead compensator is applied to this control system, and is designed by PQ method.