Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

The outgassing effects of selected vacuum materials on the vacuum characteristics were simulated by the $VacSim^{Multi}$ simulation tool. This investigation examined the feasibility of reliably simulating the outgassing characteristics of common vacuum chamber materials (aluminum, copper, stainless steel, nickel plated steel, Viton A). The optimum design factors for these vacuum systems were suggested based on the simulation results. The baking-out effects of the modeled systems and materials on the performance of the vacuum system were also analyzed. The simulation predicted that the overall outgassing effect was more significant in the TMP system than in the DP system and that the utilization of a booster pump has a greater effect on the evacuation time than on the ultimate pressure.

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

Abstract JPEG2000 achieve quality scalability through the rate control method used in the encoding process, which embeds quality layers to the code-stream. This architecture might raise two drawbacks. First, when the coding process finishes, the number and bit-rates of quality layers are fixed, causing a lack of quality scalability to code-stream encoded with a single or few quality layers. Second, in Post compression rate distortion (PCRD) the bit streams after the truncation points discarded. Therefore, computational power for the discarded bit streams is wasted. For solving of problem, through bit rate control, there are many researches. Each proposed algorithms have specially target feature that is improved performance like reducing computational power. Research results have strength and weakness. For the mean time, research contents are reviewed and compared, so we proposed research direction in the future.

A characteristic of new waveform, called a negative waveform, was studied during reset and address periods. IR distribution, black luminance and time delay were measured to compare the negative waveform with the conventional positive waveform. Based on the analysis of IR measurement, the negative waveform could accumulate more wall charges than the positive waveform. Also the black luminance of negative waveform was lower than that of positive waveform under the same bias and ramp-slope conditions. During address period, the discharge time lag was measured. The negative waveform was showed 0.25 us faster formative time lag and 0.1 us faster average time lag than those of positive waveform.

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

In this paper an attempt for realizing a storage system which works as a part of human brain has been discussed. The system is expected to be able to coordinate with human brain. And current storage may have inherent problem due to an intrinsic attribute of storage, exclusiveness. Directory structure in it must be a source of confusion, if it used out side of the range of limitation. Adapting multidimensional annotation of file name extension and directory-less file system, a new storage system able to associate and coordinate with human brain may be available near future. This paper showed that the limitation of current storage system clearly exists, because of human brain limitation to memorize directory name.

We have examined the problem of the number of quad-tree blocks that an n-dimensional rectangle will be decomposed into on the average. the contribution of this paper are both practical and theoretical. In this paper, we develops the overlapping multi-scale models and the region quad-tree models which is useful in computer graphics animation, image processing, pattern recognition and also for modeling three dimensional objects. These models, which represent something of a conceptual departure from other models developed for multi-scale framework were developed with the specific interest of producing smooth estimates.