• 한국세라믹학회지
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• 제44권1호
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• 한국지하수토양환경학회지:지하수토양환경
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• 제13권3호
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• pp.21-26
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• 2008

염화아연($ZnCl_2$)으로 표면개질된 코코넛 입상활성탄(Granular Activated Carbon, GAC)의 질산성질소 제거제로서의 적용가능성을 알아보기 위해 두 가지 질산성질소 농도(25 mg/L, 50 mg/L) 조건에서 수중에서의 질산성질소 흡착능력을 평가하였다. 표면개질된 코코넛 입상활성탄의 질산성질소 흡착은 반응초기에 빠르게 진행되어 10분 이내에 흡착율이 50%에 이르렀고 흡착평형에 소요된 시간은 1시간 이내였다. 염화아연으로 표면개질된 코코넛 입상활성탄의 질산성질소 흡착 원리를 조사하기 위해 네 가지 속도 모델들(유사 일차 모델, 유사 이차 모델, Weber & Morris의 입자내 확산 모델, 그리고 Bangham의 공극 확산 모델)을 각 모델의 속도 상수(k)에 따라 적용하였다. 그 결과, 본 연구의 흡착속도는 공극 확산 단계에 의하여 결정되는 것으로 사료되며 유사 이차 모델을 따르는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.437-437
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• 2011

수열합성법에 의해 나노와이어를 합성하였다. 수직하고 장경비가 큰 나노와이어는 기존 Zinc nitrate와 HMTA를 각각 같은 몰 농도(0.015 mol/L)로 하고 이때 나노와이어의 밀도 조절 및 수직성장을 돕고 더 길게 자랄 수 있도록 polyethylenimine (PEI)를 포함하였으며, 이때 화학적으로 불안정한 seed layer 보호하기 위하여 증가 된 Ph 농도를 완화하기 위해 nitrate acid 를 포함한 반응 용액 내에서 생성되었다. 합성된 나노와이어는 지그재그 전극과 결합하여 리니어 모터를 통해 일정한 시간 주기로 일정한 압력을 가하여 얻은 압전특성을 관찰하고 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1469-1470
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• 2011

본 연구에서는 ZnO 입자 다중 성장을 이용하여 DSC를 제작하여 ZnO DSC의 가능성을 점검하고자 하였다. ZnO 입자 성장은 zinc acetate solution을 이용하여 seed layer를 제작한 후 zinc nitrate와 NaOH 혼합 용액에 다중성장 시킴으로써 완성되며 이를 이용하여 ZnO DSC를 제작하였다. 그 결과 ZnO가 입자형태로 얻어짐을 확인하고 ZnO DSC를 성공적으로 제작할 수 있었으며 ZnO 입자 성장 후 소성을 통해 ZnO DSC의 성능을 0.406%에서 1.385%까지 개선시킬 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.191-191
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• 2003

가시광선영역에서 높은 광학적 투명도를 갖는 n-type 반도체인 ZnO 박막은 넓은 범위에서 응용되고 있다. 현재 ZnO 박막의 특성 향상을 위하여 여러 원소(Al, Ga)의 도핑을 시도하고 있다. 특히 Al-doped ZnO 박막은 sol-gel dip coating에 의해서도 높은 전기전도도와 투과율로 활발히 연구되고 있다 본 논문에서는 여러 도핑농도를 갖는 Al-doped ZnO 박막이 sol-gel dip coating법에 의해 준비되었다. Al-doped ZnO 박막은 zinc acetate [Zn($CH_3$COO$_2$)ㆍ2$H_2O$] powder 와 여러 도핑농도를 갖는 aluminum nitrate (Al(NO$_3$)$_3$ㆍ9$H_2O$) powder를 알코올에 용해하여 $H_2O$, Ethylene glycol, Ethylene diamine 등을 첨가하여 제조하였다 XRD와 SEM (Scanning electron microscope)이 막의 상형성 분석을 위해 이용되었으며, 가시광선 영역 투과율(UV/VIS spectrophotometer)과 표면전기저항(four point probe)이 주요 특성으로 분석되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1013-1016
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• 2003

A new route for the synthesis of silver doped of zinc sulfide phosphor by combustion method has been investigated. Silver nitrate was decomposed with urea or carbohydrazide to give small size particles in presence of alkali metal halides at low temperature compared to the conventional method. The high temperature inherent to the highly exothermic nature of redox reaction leads to well-crystallized powder in short time. The phosphors thus obtained were further heated at $1050^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescence properties.

• 한국세라믹학회지
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• 제45권7호
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• pp.401-404
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• 2008

Willemite ($Zn_2SiO_4$) are a wide range of applications such as a phosphor host and an important crystalline phase in glass ceramics, electrical insulators, glazes, and pigments. In this study, Willemite precursors were synthesized with zinc silicate gels from mixture of zinc nitrate solution and various sodium silicate solution by the geopolymer technique. To examine the crystallization behavior, precursors were have been monitored by the XRD. A pure willemite phase was obtained at $900^{\circ}C$. TEM investigations revealed that the sample with 50 nm particle size was obtained via heat-treated at $900^{\circ}C$ for W-3.