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http://dx.doi.org/10.4191/KCERS.2007.44.1.032

Synthesis and Photoluminescence Characteristics of Zinc Gallate (ZnGa2O4) Thin Film Phosphors  

Kim, Su-Youn (Department of Materials Science and Engineering, Hanyang University)
Yun, Young-Hoon (Department of Hydrogen and Fuel Cell Technology, Dongshin University)
Choi, Sung-Churl (Department of Materials Science and Engineering, Hanyang University)
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Abstract
Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).
Keywords
$ZnGa_2O_4$; Thin film phosphor; Chemical solution method; Photoluminescence;
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