• 제목/요약/키워드: wet etching

검색결과 469건 처리시간 0.029초

비이온계 계면활성제기반 고순도 알루미늄 습식식각을 통한 균일한 마이크로패턴 어레이 제작 (Fabrication of uniform micropattern arrays using nonionic surfactant-based wet etching process of high purity aluminum)

  • 장웅기;전은채;최두선;김병희;서영호
    • 한국기계가공학회지
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    • 제13권4호
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    • pp.13-20
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    • 2014
  • In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

Thin Film Battery Using Micro-Well Patterned Titanium Substrates Prepared by Wet Etching Method

  • Nam, Sang-Cheol;Park, Ho-Young;Lim, Young-Chang;Lee, Ki-Chang;Choi, Kyu-Gil;Park, Gi-Back
    • 전기화학회지
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    • 제11권2호
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    • pp.100-104
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    • 2008
  • Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

레이저습식각을 이용한 용융실리카의 미세구멍가공 (Micro-drilling of Fused Silica by Laser Induced Wet Etching)

  • 백병선;이종길;전병희
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1344-1348
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    • 2003
  • It is generally known to be difficult to etch a surface of a transparent material such as fused silica by conventional laser ablation in which the surface is simply irradiated with a laser beam. A lot of studies have been done to provide a method capable of efficiently etching transparent materials without defects such as cracks. One of the promising methods or the micro-machining of optically transparent materials is laser induced etching. In this study, micro-drilling of fused silica by laser induced wet etching was conducted. KrF excimer and YAG laser were used as light sources. Acetone solution pyrene and ethanol solution of rhodamine were used as etchant.

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변형 에너지가 나노압입 유기 Hillock 현상에 미치는 영향 (Effect of Deformation Energy on the Indentation Induced Etch Hillock)

  • 김현일;윤성원;강충길
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 춘계학술대회 논문집
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    • pp.225-228
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    • 2005
  • The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.

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저불산 불소계 화합물 수용액을 이용한 글라스 박판화 (Glass Thinning by Fluoride Based Compounds Solution with Low Hydrofluoric acid Concentration)

  • 김호태;강동구;김진배
    • 공업화학
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    • 제20권5호
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    • pp.557-560
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    • 2009
  • 본 연구에서는 글라스를 $100{\mu}m$ 이하의 두께로 박판화하기 위한 새로운 습식 에칭방법 및 에칭 용액을 검토하였다. $NH_4F$ 또는 $NH_4HF_2$를 주성분으로 황산 또는 질산을 첨가한 경우 에칭 용액의 불산 함유량을 저감하는 데에 효과가 있었다. 혼산 용액의 조성과 온도의 영향을 검토하였으며, 음이온계 계면활성제의 첨가는 에칭반응에 의해 생성되는 슬러지의 부착을 억제해주는 효과가 있었다. 수류 발생부를 가지는 새로운 파일럿 장비를 사용하여 상용 무알칼리 글라스와 소다라임 글라스의 에칭 실험을 실시하였다. $640{\mu}m$ 두께의 무알칼리 글라스를 $45{\mu}m$ 두께로 $500{\mu}m$ 두께의 소다라임 글라스를 $100{\mu}m$ 두께로 박판화하였으며, 에칭 후의 표면 조도는 $0.01{\sim}0.02{\mu}m$를 유지하였다.

습식식각 방법으로 제작한 패턴 형성 사파이어 기판을 가지는 GaN계 청색 LED (GaN Base Blue LED on Patterned Sapphire Substrate by Wet Etching)

  • 김도형;이용곤;유순재
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.7-11
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    • 2011
  • Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

습식 식각법으로 제조된 박막 인덕터의 임피턴스 특성 (Impedance Properties of Thin Film Inductors by Fabricated Wet Etching Method)

  • 김현식;송재성;오영우
    • E2M - 전기 전자와 첨단 소재
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    • 제10권8호
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    • pp.813-818
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    • 1997
  • In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

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Photoelectrochemical Hydrogen Production on Textured Silicon Photocathode

  • Oh, Il-Whan
    • 전기화학회지
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    • 제14권4호
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    • pp.191-195
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    • 2011
  • Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

고출력 LED 패키지의 Thermal Via 형성을 위한 Si 기판의 이방성 습식식각 공정 (Anisotropic Wet-Etching Process of Si Substrate for Formation of Thermal Vias in High-Power LED Packages)

  • 유병규;김민영;오태성
    • 마이크로전자및패키징학회지
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    • 제19권4호
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    • pp.51-56
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    • 2012
  • 습식공정으로 thermal via용 SI 관통 via를 형성하기 위해 TMAH 용액의 농도와 온도에 따른 Si 기판의 이방성 습식식각 거동을 분석하였다. TMAH 용액의 온도를 $80^{\circ}C$로 유지한 경우, 5 wt%, 10 wt% 및 25 wt% 농도의 TMAH 용액은 각기 $0.76{\mu}m/min$, $0.75{\mu}m/min$$0.30{\mu}m/min$의 Si 식각속도를 나타내었다. 10 wt% TMAH 용액의 온도를 $20^{\circ}C$$50^{\circ}C$로 유지시에는 각기 $0.07{\mu}m/min$$0.23{\mu}m/min$으로 식각속도가 저하하였다. Si 기판의 양면에 동일한 형태의 식각 패턴을 형성하여 $80^{\circ}C$의 10 wt% TMAH 용액에 장입하고 5시간 식각하여 깊이 $500{\mu}m$의 관통 via hole을 형성하였다.

n-표면 거칠기가 형성된 AlGaInP 수직형 적색 발광다이오드의 광추출효율 증가 (Improved light extraction efficiency of vertical AlGaInP-based LEDs by n-AlGaInP surface roughening)

  • 서재원;오화섭;송현돈;박경욱;유성욱;박영호;박해성;곽준섭
    • 한국진공학회지
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    • 제17권4호
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    • pp.353-358
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    • 2008
  • AlGaInP 기반 수직형 적색 LED (Light Emitting Diode)의 광추출효율을 증가시키기 위하여 화학적 etching 기술을 이용하여 n-AlGaInP 표면에 삼각꼴 모양의 거칠기를 형성하였다. Etching은 $H_3PO_4$계의 용액을 이용하여 화학적 etching을 진행 하였다. AlGaInP etching은 광추출효율의 증가와 밀접한 관련을 갖고 있으며 AFM (Atomic Force Microscope)을 이용하여 AlGaInP 표면을 분석하여 약 44 nm의 RMS (root-mean-square) 거칠기가 형성됨을 알 수 있었다. 광추출효율은 기존 수직형 적색 LED보다 거칠기가 형성된 수직형 적색 LED에서 41%의 높은 발광 효율을 보임으로써 고효율 수직형 적색 LED의 가능성을 보였다.