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http://dx.doi.org/10.5757/JKVS.2008.17.4.353

Improved light extraction efficiency of vertical AlGaInP-based LEDs by n-AlGaInP surface roughening  

Seo, Jae-Won (Department of Materials science and Engineering, Sunchon National University)
Oh, Hwa-Sub (Department of Materials science and Engineering, Sunchon National University)
Song, Hyun-Don (Epiplus Co. Ltd.)
Park, Kyung-Wook (Epiplus Co. Ltd.)
Ryu, Seong-Wook (Epiplus Co. Ltd.)
Park, Yung-Ho (Epiplus Co. Ltd.)
Park, Hae-Sung (Epiplus Co. Ltd.)
Kwak, Joon-Seop (Department of Materials science and Engineering, Sunchon National University)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.4, 2008 , pp. 353-358 More about this Journal
Abstract
In order to increase extraction efficiency of AlGaInP-based vertical RED LEDs, chemical wet etching technique was produced by using a roughened surface with triangle-like morphology. A commonly used $H_3PO_4$-based solution was applied for chemical wet etching. The light extraction of AlGaInP LED was related to the n-side roughed surface morphology. The morphology of roughed surface is analyzed by the atomic force microscope (AFM). As a result, the roughed surface AlGaInP LED has a root-mean-square (RMS) roughness of 44 nm. The brightness shows 41% increase after roughening n-side surface, as compared to the ordinary flat surface LED.
Keywords
AlGaInP; Roughness; Vertical red LED; Chemical wet etching;
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