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http://dx.doi.org/10.6117/kmeps.2012.19.4.051

Anisotropic Wet-Etching Process of Si Substrate for Formation of Thermal Vias in High-Power LED Packages  

Yu, B.K. (Department of Materials Science and Engineering, Hongik University)
Kim, M.Y. (Department of Materials Science and Engineering, Hongik University)
Oh, T.S. (Department of Materials Science and Engineering, Hongik University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.19, no.4, 2012 , pp. 51-56 More about this Journal
Abstract
In order to fabricate through-Si-vias for thermal vias by using wet etching process, anisotropic etching behavior of Si substrate was investigated as functions of concentration and temperature of TMAH solution in this study. The etching rate of 5 wt%, 10 wt%, and 25 wt% TMAH solutions, of which temperature was maintained at $80^{\circ}C$, was $0.76{\mu}m/min$, $0.75{\mu}m/min$, and $0.30{\mu}m/min$, respectively. With changing the temperature of 10 wt% TMAH solution to $20^{\circ}C$ and $50^{\circ}C$, the etching rate was reduced to $0.067{\mu}m/min$ and $0.233{\mu}m/min$, respectively. Through-Si-vias of $500{\mu}m$-depth could be fabricated by etching a Si substrate for 5 hours in 10 wt% TMAH solution at $80^{\circ}C$ after forming same via-pattern on each side of the Si substrate.
Keywords
LED; anisotropic wet etching; thermal via; through-Si-via; TMAH;
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Times Cited By KSCI : 5  (Citation Analysis)
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