• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Journal of Institute of Control, Robotics and Systems
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• v.21 no.12
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• pp.1115-1121
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• 2015

Fast inspection of solder ball bumps in ball grid array (BGA) is an important issue in the flip chip bonding technology. Particularly, semiconductor industry has required faster and more accurate inspection of micron-size solder bumps in flip chip bonding, as the density of balls increase dramatically. In this paper, we describe an inspection approach of BGA balls by using 5-step ring illumination device and normalized cross-correlation (NCC) method. The images of BGA ball by the illumination device show unique and distinguishable characteristic contours by their 3-D shapes, which are called as "iso-slope contours". Template images of reference ball samples can be produced artificially by the hybrid reflectance model and 3D data of balls. NCC values between test and template samples are very robust and reliable under well-structured condition. The 200 samples on real wafer are tested and show good practical feasibility of the proposed method.

• Journal of Mechanical Science and Technology
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• v.19 no.2
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• pp.682-691
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• 2005

This paper describes the design, fabrication, and testing of a microturbine developed at Seoul National University. Here, the term 'microturbine' refers to a radial turbine with a diameter on the order of a centimeter. Such devices can be used to transmit power for various systems. The turbine is designed using a commercial CFD code, and it has a design flow coefficient of 0.238 and work coefficient of 0.542. It has 31 stator blades and 24 rotor blades. A hydrodynamic journal bearing and hydrostatic thrust bearings counteract radial and axial forces on the rotor. The test turbine consists of a stack of five wafers and is fabricated by MEMS technology, using photolithography, DRIE, and bonding processes. The first, second, fourth, and fifth layers contain plumbing, and hydrostatic axial thrust bearings for the turbine. The third wafer contains the turbine's stator, rotor, and hydrodynamic journal bearings. Furthermore, a turbine test facility containing a flow control system and instrumentation has been designed and constructed. In performance tests, a maximum rotation speed of 11,400 rpm and flow rate of 16,000 sccm have been achieved.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.33-38
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• 2001

10cm-diameter Si(100)∥$1.3\mu\textrm{m}$-X$1.3_2$X$1.3\mu\textrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$\mu\textrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$\m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$'s.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.63-66
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• 2013

This paper describes the highly productive process technologies of microprobe arrays, which were used for a probe card to test a Dynamic Random Access Memory (DRAM) chip with fine pitch pads. Cantilever-type microprobe arrays were fabricated using conventional micro-electro-mechanical system (MEMS) process technologies. Bonding material, gold-tin (Au-Sn) paste, was used to bond the Ni-Co alloy microprobes to the ceramic space transformer. The electrical and mechanical characteristics of a probe card with fabricated microprobes were measured by a conventional probe card tester. A probe card assembled with the fabricated microprobes showed good x-y alignment and planarity errors within ${\pm}5{\mu}m$ and ${\pm}10{\mu}m$, respectively. In addition, the average leakage current and contact resistance were approximately 1.04 nA and 0.054 ohm, respectively. The proposed highly productive microprobes can be applied to a MEMS probe card, to test a DRAM chip with fine pitch pads.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of Biomedical Engineering Research
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• v.37 no.5
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• pp.168-177
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• 2016

In this paper we present an implantable pressure sensor to measure real-time blood pressure by monitoring mechanical movement of artery. Sensor is composed of inductors (L) and capacitors (C) which are formed by microfabrication and direct bonding on two biocompatible substrates (quartz). When electrical potential is applied to the sensor, the inductors and capacitors generates a LC resonance circuit and produce characteristic resonant frequencies. Real-time variation of the resonant frequency is monitored by an external measurement system using inductive coupling. Structural and electrical simulation was performed by Computer Aided Engineering (CAE) programs, ANSYS and HFSS, to optimize geometry of sensor. Ultrafast laser (femto-second) cutting and MEMS process were executed as sensor fabrication methods with consideration of brittleness of the substrate and small radial artery size. After whole fabrication processes, we got sensors of $3mm{\times}15mm{\times}0.5mm$. Resonant frequency of the sensor was around 90 MHz at atmosphere (760 mmHg), and the sensor has good linearity without any hysteresis. Longterm (5 years) stability of the sensor was verified by thermal acceleration testing with Arrhenius model. Moreover, in-vitro cytotoxicity test was done to show biocompatiblity of the sensor and validation of real-time blood pressure measurement was verified with animal test by implant of the sensor. By integration with development of external interrogation system, the proposed sensor system will be a promising method to measure real-time blood pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.145-152
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• 2015

In this work, we were investigated the effect of the additive gases on the relationship between bonding structure and mechanical properties of the deposited films when the DLC films were deposited on Si-wafer by the rf-PECVD method with the addition of small amounts of carbon dioxide and nitrogen to the mixture gas of methane and hydrogen. The deposition rate of the films increased as the rf-power increased, while it decreased with increasing the amount of additive gases. Also, as the carbon dioxide gas increased, the hydrogen content in the films decreased but the $sp^3/sp^2$ ratio of the films increased. In case of nitrogen gas, the hydrogen content decreased, however the $sp^3/sp^2$ ratio and nitrogen gas flow rate did not show a specific tendency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.