한국신재생에너지학회:학술대회논문집
- 2011.05a
- /
- Pages.128.1-128.1
- /
- 2011
Surface passivation study of a-Si:H/c-Si heterojunction solar cells using VHF-CVD
VHF-CVD를 이용한 a-Si:H/c-Si 이종접합태양전지 표면 패시배이션 연구
- Song, JunYong ;
- Jeong, Daeyoung ;
- Kim, Kyoung Min ;
-
Park, Joo Hyung
;
-
Song, Jinsoo
;
-
Kim, Donghwan
;
-
Lee, JeongChul
- 송준용 (한국에너지기술연구원) ;
- 정대영 (한국에너지기술연구원) ;
- 김경민 (한국에너지기술연구원) ;
-
박주형
(한국에너지기술연구원)
;
-
송진수
(한국에너지기술연구원)
;
-
김동환
(고려대학교)
;
-
이정철
(한국에너지기술연구원)
- Published : 2011.05.26
Abstract
In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.
Keywords