• Journal of Adhesion and Interface
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• v.22 no.2
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• pp.57-62
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• 2021

Recently, the atomically thin two-dimensional transition-metal dichalcogenides (TMDs) have received considerable attention for the application to next-generation semiconducting devices, owing to their remarkable properties including high carrier mobility. However, while a technique for growing graphene is well matured enough to achieve a wafer-scale single crystalline monolayer film, the large-area growth of high quality TMD monolayer is still a challenging issue for industrial application. In order to enlarge the size of single crystalline MoS₂ monolayer, here, we systematically investigated the effect of process parameters in molten-salt-assisted chemical vapor deposition method. As a result, with optimized process parameters, we found that single crystalline monolayer MoS₂ can be grown as large as 420 ㎛.

• Journal of Conservation Science
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• v.37 no.2
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• pp.167-178
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• 2021

For the preservation and efficient content sharing of 5 volumes (2,866 pages) of Yu Kil-Chun's book published in 1971, which provides an important collection of data for the study of modern Korean history during the late 19th century (enlightenment period of Joseon dynasty). The books were purchased and its preservation status investigated and documented electronically by scanning for permanent preservation of content and to determine the condition of preservation at the time of documentation. The degree of deterioration and damage, such as discoloration, hardening, breakage, and damage in these 50 years old modern printed books was quantified through image analysis and made attempts to visualize the damaged areas. It was observed that the degree of deterioration and damage depended on the material and the surface condition of the paper used, the degree of exposure to light, and the storage environment. The comparison of the preservation status at the time of the photographing (or scanning) and judgment as to whether or not the image under investigation was artificially modified was accomplished by comparing the electronically documented images of Seoyugyeonmun (西遊見聞) in Volume 1 of Yu Kil-Chun's works with images provided on other websites. Practical problems encountered while considering the effective preservation of electronically documented data and publicly sharing it, in the course of this study, with other academic researchers around the world were also summarized.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.631-635
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• 2011

Spherical and non-spherical silica particles prepared by the direct oxidation were studied for the effect of the particle size and shape of these particles on oxide CMP removal rate. Spherical silica particles, which have 10~100 nm in size, were prepared by the direct oxidation process from silicon in the presence of alkali catalyst. The 10 nm silica particles were aggregated by addition of an acid, an alcohol, or a silane as an aggregation inducer between the particles. Two or more aggregated silica particles were used as a seed to grow non spherical silica particles in the direct oxidation process of silicon in the presence of alkali catalyst. The oxide removal rate of spherical silica particles increased with increasing an average particle size for spherical silica abrasives in the oxide CMP. It further increased non-spherical particles, compared with the spherical particles in the similar average particle size.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.49-54
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• 2022

The copper plating process used to fabricate the submicron damascene pattern of Cu wiring for Si wafer was applied to the plating of a PCB pattern of several tens of microns in size using the same organic additives and current density conditions. In this case, the non-uniformity of the plating thickness inside the pattern was observed. In order to quantitatively analyze the cause, a numerical calculation considering the solution flow and electric field was carried out. The calculation confirmed that the depletion of Cu²⁺ ions in the solution occurred relatively earlier at the bottom corner than the upper part of the pattern due to the plating of the sidewall and the bottom at the corner of the pattern bottom. The diffusion coefficient of Cu²⁺ ions is 2.65 10^-10 m²/s, which means that Cu²⁺ ions move at 16.3 ㎛ per second on average. In the cases of small damascene patterns, the velocity of Cu²⁺ ions is high enough to supply sufficient ions to the inside of the patterns, while sufficient time is required to replenish the exhausted copper ions in the case of a PCB pattern having a size of several tens of microns. Therefore, it is found that the thickness uniformity can be improved by reducing the current density to supply sufficient copper ions to the target area.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.630-635
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• 2022

Copper(II) oxide (CuO), electroless plated on a nitrogen-containing carbon sponge prepared by a melamine sponge thermal treatment, was developed as a nitric oxide (NO) gas sensor that operates without a wafer. The CuO content on the surface of the carbon sponge increased as the plating time increased, but the content of nitrogen known to induce NO gas adsorption decreased. The untreated carbon sponge showed a maximum resistance change (5.0%) at 18 min. On the other hand, the CuO plated sample (CuO30s-CS) showed a maximum resistance change of 18.3% in 8 min. It is considered that the improvement of the NO gas sensing capability was caused by the increase in hole carriers of the carbon sponge and improved movement of electrons due to CuO. However, the NO gas detection resistance of the CuO electroless plated carbon sponge for 60 s decreased to 1.9%. It is considered that the surface of the carbon sponge was completely plated with CuO, resulting in a decrease in the NO gas adsorption capacity and resistance change. Thus, CuO-plated carbon sponge can be used as an effective NO gas sensor because it has fast and excellent resistance change properties, but CuO should not be completely plated on the surface of the carbon sponge.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of Conservation Science
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• v.36 no.6
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• pp.511-518
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• 2020

There have been reports that the "jeongcho (定礎)" letters of the foundation stone at the historical site No. 280 of the "Main Building of the Bank of Korea in Seoul" were written by Prince Ito Hirobumi (伊藤博文), the first Resident-General of Japan in Korea. An on-site investigation by an advisory group consisting of three experts in calligraphy; revealed that the two characters of '定礎' inscribed on the foundation stone are the characteristics of Ito Hirobumi's handwriting, judging from the writing style and habits observed in the collections of the Central Library of Hamamatsu City, Japan. It was reported that his writing was confirmed by the experts, but no basis was provided. To provide more objective and quantitative supporting data, rather than qualitative judgment based on feeling, it is necessary to present the basis for judgment through quantitative image comparison results through image analysis. In this paper, using image analysis software, Ito Hirobumi's calligraphy writing and the inscribed characters of the foundation stone were compared and analyzed to confirm the contents of the press release. The character comparison process and character area measurement results are a good example showing that if objective judgment basis data are needed in a similar situation, an objective judgment basis can be prepared through quantification using image analysis.

• Journal of Conservation Science
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• v.38 no.2
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• pp.96-108
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• 2022

To understand the process of publication and distribution of ancient Korean novels under the Joseon dynasty and Japanese occupation, collecting information on the publication of various printed materials and estimating their publication date through various methods is extremely important. In this study, the characteristics and differences that appeared in the woodblock printing process were investigated using image comparison among editions of the Honggildongjeon (Tale of Honggildong) of Wanpanbon (完板本) (published in the Jeonju region) with other commercial editions of the ancient Korean novels. Additionally, the publication year of each edition was estimated. Printed images of different versions were compared with those of a recently discovered original series version and the changes in the process of carving replacement woodblocks were investigated and summarized. Various phenomena, such as differences in fonts, borderline shapes and integrity of printed characters, appearing in woodblock prints provided useful information for determining chronological relationships between the prints and estimating the approximate publication year for each edition. The various characteristics of woodblock printing obtained through this study are expected to serve as a reference for estimating the relationship between the printing method and the approximate publication date of old books and paper-based printed historical records.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.