• Title/Summary/Keyword: voltage-controlled oscillator(VCO)

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An Available Capacitance Increasing PLL with Two Voltage Controlled Oscillator Gains (두 개의 이득 값을 가지는 전압제어발진기를 이용하여 유효 커패시턴스를 크게 하는 위상고정루프)

  • Jang, Hee-Seung;Choi, Young-Shig
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.82-88
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    • 2014
  • An available capacitance increasing phase-locked loop(PLL) with two voltage controlled oscillator gains has been proposed. In this paper, the available capacitance of loop filter is increased by using two positive/negative gains of voltage controlled oscillator (VCO). It results in 1/10 reduction in the size of loop filter capacitor. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process. The simulation results show that the proposed PLL has the same phase noise characteristic and a locking time of conventional PLL.

Analysis of PLL Phase Noise Effect for High Data-rate Underwater Communications

  • Lee, Chong-Hyun;Bae, Jin-Ho;Hwang, Chang-Ku;Lee, Seung-Wook;Shin, Jung-Chae
    • International Journal of Ocean System Engineering
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    • v.1 no.4
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    • pp.205-210
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    • 2011
  • High data-rate underwater communications is demanded. This demand imposes stringent requirements on underwater communication equipment of phase-locked-loop (PLL). Phase noise in PLL is unwanted and unavoidable. In this paper, we investigate the PLL phase noise effect on high order QAM for underwater communication systems. The phase noise model using power spectral density is adopted for performance evaluation. The phase noise components considered in PLL are reference oscillator, voltage controlled oscillator (VCO), filter and divider. The filters in PLL noise are assumed to be second order active and passive low pass filters. Through simulation, we analyze the phase noise characteristics of the four components and then investigate the performance improvement factor of each component. Consequently, we derive specifications of VCO, phase detector, divider to meet performance requirement of high data-rate communication using QAM under phase noise influence.

A New Switchable Dual Mode Voltage Controlled Oscillator (새로운 구조의 스위치형 이중 모드 전압 제어 발진기)

  • Ryu, Jee-Youl;Deboma, Gilbert D.
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.869-872
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    • 2005
  • This paper presents a new switchable dual mode VCO(Voltage-Controlled Oscillator). The VCO is efficient in dual mode operation and has self-bias adjustment based on the operation frequencies of 2.4 GHz and 5 GHz. The switching is done using MOS transistors and tuning is done using MOS varactors. It is implemented using TSMC 0.18${\mu}$m CMOS technology. It is powered by 1.8V supply. The measured results showed that the overall tuning range is approximately 13% at 5 GHz and 8% at 2.4 GHz. The measured phase noise is approximately -102 dBc/Hz at 1 MHz offset for 5 GHz and -89 dBc/Hz at 600kHz offset for 2.4 GHz. The VCO showed tail currents of 2mA in 5GHz mode and 2.5mA in 2.4GHz mode from a 1.8 V supply, respectively.

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Design of CMOS Dual-Modulus Prescaler and Differential Voltage-Controlled Oscillator for PLL Frequency Synthesizer (PLL 주파수 합성기를 위한 dual-modulus 프리스케일러와 차동 전압제어발진기 설계)

  • Kang Hyung-Won;Kim Do-Kyun;Choi Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2006.08a
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    • pp.179-182
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    • 2006
  • This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

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Improvement of Phase Noise Characteristics for Tuning Voltage in Voltage Controlled Oscillator using Coupled Microstrip Lines (결합 마이크로스트립 라인을 이용한 전압제어 발진기의 동조전압에 따른 위상잡음 특성 개선)

  • Ryu, Keun-Kwan;Shin, Dong-Hwan;Yom, In-Bok;Kim, Sung-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.5A
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    • pp.513-518
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    • 2010
  • Improvement of phase noise characteristics in a different approach of HEMT VCO (Voltage Controlled Oscillator) with coupled microstrip lines to tune the oscillating frequency is investigated. Two HEMT VCOs of 9.8GHz are manufactured in the same configuration except for the frequency tuning circuit in order to empirically demonstrate the phase noise reduction. Experimental result shows that phase noise reduction can be enhanced 8dBc/Hz at 100KHz offset frequency from carrier by frequency tuning circuit with coupled microstrip lines over the conventional VCO.

Design of Multi-layer VCO for 960 MHz Band (960 MHz대역 다층구조 VCO 설계)

  • 이동희;정진휘
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.492-498
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    • 2002
  • In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2 mm$(0.11 [cc]).

Oscillation Characteristics of the Multi-Layered VCO for using 960 MHz Band (960 MHz 다층구조 VCO 발진특성)

  • Rhie, Dong-Hee;Park, Gwi-Nam;Lee, Hun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.653-656
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    • 2002
  • In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2$ mm(0.11[cc]).

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Design of a Low-Power Low-Noise Clock Synthesizer PLL (저전력 저잡음 클록 합성기 PLL 설계)

  • Park, J.K.;Shim, H.C.;Park, J.T.;Yu, C.G.
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.479-481
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    • 2006
  • This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

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Design and fabrication of GaAs MMIC VCO/Mixer for PCS applications (PCS영 GaAs VCO/Mixer MMIC 설계 및 제작에 관한 연구)

  • 강현일;오재응;류기현;서광석
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.1-10
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    • 1998
  • A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

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$0.13{\mu}m$ CMOS Quadrature VCO for X-band Application ($0.13{\mu}m$ CMOS 공정을 이용한 X-band용 직교 신호 발생 전압제어 발진기)

  • Park, Myung-Chul;Jung, Seung-Hwan;Eo, Yun-Seong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.8
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    • pp.41-46
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    • 2012
  • A quadrature voltage controlled oscillator(QVCO) for X-band is presented in this paper. The QVCO has fabricated in Charted $0.13{\mu}m$ CMOS process. The QVCO consists of two cross-coupled differential VCO and two differential buffers. The QVCO is controlled by 4 bit of capacitor bank and control voltage of varactor. To have a linear quality factor of varactors, voltage biases of varactors are difference. The QVCO generates frequency tuning range from 6.591 GHz to 8.012 GHz. The phase noise is -101.04 dBc/Hz at 1MHz Offset when output frequency is 7.150 GHz. The supply voltage is 1.5 V and core current 6.5-8.5 mA.