Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Design and fabrication of GaAs MMIC VCO/Mixer for PCS applications

PCS영 GaAs VCO/Mixer MMIC 설계 및 제작에 관한 연구

  • 강현일 (한양대학교 전자공학과 전자재료 및 부품연구센터) ;
  • 오재응 (한양대학교 전자공학과 전자재료 및 부품연구센터) ;
  • 류기현 (서울대학교 전기공학부) ;
  • 서광석 (서울대학교 전기공학부)
  • Published : 1998.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

Keywords