• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.514-516
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• 2018

We have investigated the effect of interface trap charge on the characteristics of a monolithic 3D inverter by TCAD simulation. The interface trap charge affects the variation of the threshold voltage and threshold voltage. also The interface trap charge affects the IN/OUT characteristics of the monolithic 3D inverter.

• The Journal of Korean Obstetrics and Gynecology
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• v.25 no.2
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• pp.23-42
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• 2012

Objectives: This study was performed to evaluate the effect of Samkieumgamibang (SKG) on osteoporosis. Methods: The osteoclastogenesis and gene expression were determined in RANKL-stimulated RAW 264.7 cell. And, osteoblastogenesis was also determined in rat calvarial cell. Results: SKG decreased the number of TRAP positive cell in osteoclast. It also decreased the expression of Cathepsin K, MMP-9, TRAP, c-fos, NAFTc1 and JNK1 in osteoclast. SKG increased the expression of iNOS in RANKL-stimulated in osteoclast. Otherwise, SKG inhibited TRAP activity in osteoclast. SKG increased cell proliferation, ALP activity, bone martix protein, collagen and nodule in osteoblast. Conclusions: It is concluded that SKG might decrease the bone resorption resulted from decrease of osteoclast differentiation and it's related gene expression. And, SKG might increase the bone formation resulted from increase of osteoblast function.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Analytical Science and Technology
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• v.8 no.4
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• pp.739-744
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• 1995

The two main methods to prepare water samples for analyzing volatile organic compounds(VOC's) were investigated. One is the purge and trap(PT) method and another is the head space(HS) sampling method. Both methods were effective to transfer the low boiling point components from the water sample onto the capillary column. The cryo-focusing at the top of the main capillary column was an effective way to obtain the sharpness of the chromatographic peaks but could be avoided when a semi-wide bore column was used. The recovery from the same amount of the sample was better in PT than in HS but a larger sample volume in HS method could compensate the lower efficiency. Therefore PT is suitable to the analysis of drinking water where the very low concentration must be determined. HS is suitable to waste water analysis because of the easiness of the operation. The repeatability was good and similar in both methods. For the contamination of the former sample, both methods were tough and could be used without any problems. The matrix effect which could change the equilibrium parameters in HS method was find negligible in many components. The actual samples such as tap water and river water were analyzed with both methods concerning 16 components regulated in Korea.

• Journal of the Korean GEO-environmental Society
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• v.17 no.7
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• pp.27-33
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• 2016

This study expanded Terzaghi arching formula, which assumed a vertical surface as a sliding surface, to consider an arbitrarily inclined surface as a sliding surface and examined the effect of a sliding surface. This study firstly developed a formula to expand the existing Terzaghi arching formula to consider an inclined surface as well as a vertical surface as a sliding surface under the downward movement of a trap door. Using the expanded formula, the effect of excavation, ground, and surcharge conditions on a vertical stress was examined and the results were compared with them from Terzaghi arching formula. The comparison indicated that the induced vertical stress was highly affected by the angle of an inclined sliding surface and the degree of influence depended on the excavation, ground, and surcharge conditions. It is expected that the results from this study would provide a better understanding of various arching phenomenon in the future.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.27-32
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• 1984

In SAW filters with a small aperture, diffraction effect is not negligible and degrades the frequency response near the trap. A computer simulation program for diffraction analysis is developed, and an effective diffraction compensation method is proposed to compensate the diffraction effect. A TV-lF SAW filter was designed with the diffraction taken account by the proposed method, which satisfies given frequency specifications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.5
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• pp.179-189
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• 2008

The performance of Lean NOx Trap (LNT) based on the catalysts of Pt/K/Ba/$\gamma-Al_2O_3$ with proprietary washcoat formulation is studied using a bench flow reactor system. To investigate the effect of temperature and gas hourly space velocity (GHSV) on the nitrogen oxides (NOx) trapping capacity as well as NOx breakthrough time and final ratio of $NO_2$ to NO of LNT, series of adsorption isotherms are carried out with simulated exhaust gases of the lean burn engines. Since typical operation of LNT requires periodic regeneration with a short rich excursion, where the stored or trapped NOx is released and subsequently reduced to $N_2$, the effect of the duration of lean and rich phase and type of reductants on the NOx conversion is investigated. NOx storage capacity and breakthrough time obtained from adsorption isotherms shows a volcano-type dependence on the temperature with a maximum NOx storage capacity occurring $350^{\circ}C$ and with a maximum breakthrough time occurring $400^{\circ}C$ at all GHSVs investigated in this study. Also, maximum ratio of $NO_2$ to NO is obtained at $400^{\circ}C$ with a GHSV of $75,000\;hr^{-1}$ Lean/rich cycle of 100 s lean and 5 s rich used with a concentration of 1.33% of $H_2$ and 4% of CO in the rich phase is found to be optimum at operating temperature of $350^{\circ}C$ and a GHSV of $50,000\;hr^{-1}$.

• Archives of Pharmacal Research
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• v.29 no.8
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• pp.691-698
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• 2006

Although glucocorticoids are known to affect osteoclast differentiation and function, there have been conflicting reports about the effect of glucocorticoids on osteoclast formation, leading to the assumption that microenvironment and cell type influence their action. We explored the effect of the synthetic glucocorticoid analog dexamethasone on the formation of osteoclasts. Dexamethasone inhibited the formation of tartrate-resistant acid phosphatase (TRAP)-positive multinucleated osteoclasts without affecting the formation of TRAP-positive mononuclear cells in a coculture of mouse osteoblasts and bone marrow cells. Dexamethasone did not inhibit mRNA expression levels of the receptor activator of nuclear factor-kB ligand and osteoprotegerin, the essential regulators of osteoclastogenesis. Dexamethasone down-regulated the expression of ${\beta}_3$ integrin mRNA and protein but did not alter expression of other osteoclast differentiation marker genes. Both dexamethasone and echistatin, a ${\beta}_3$ integrin function blocker, inhibited TRAP-positive multinucleated osteoclast formation but not TRAP-positive mononuclear cell formation. These results suggest that dexamethasone inhibits the formation of multinucleated osteoclasts, at least in part, through the down-regulation of ${\beta}_3$ integrin, which plays an important role in the formation of multinucleated osteoclasts.