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http://dx.doi.org/10.4313/JKEM.2014.27.10.648

Effect of Post Annealing in Oxygen Ambient on the Characteristics of Indium Gallium Zinc Oxide Thin Film Transistors  

Jeong, Seok Won (Department of Mechatronics, Daelim University College)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.10, 2014 , pp. 648-652 More about this Journal
Abstract
We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.
Keywords
a-IGZO; Oxide TFT; $O_2$ annealing; Interface trap density;
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1 F. Mondon and S. Blonkowski., Microelectronics Reliability, 43, 1259 (2003).   DOI   ScienceOn
2 J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett., 91, 113505 (2007).   DOI   ScienceOn
3 J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, and H. K. Chung, Appl. Phys. Lett., 95, 013503 (2009).   DOI   ScienceOn
4 P. Barquinha, L. Pereira, G. Goncalves, R. Martins, and E. Fortunato, J. Electrochemical Society, 156, H161 (2009).   DOI   ScienceOn
5 H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, J. Non-Cryst. Solids., 354, 2796 (2008).   DOI   ScienceOn
6 P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, J. Non-Cryst. Solids, 352, 1749 (2006).   DOI   ScienceOn
7 R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, and G. Kiriakidis, J. Appl. Phys., 96, 1398 (2004).   DOI
8 E. Chong, Y. S. Chun, S. H. Kim, and S. Y. Lee, Journal of Electrical Engineering & Technology, 6, 539 (2011).   DOI   ScienceOn
9 K. Nomura, T. Kamiya, and H. Hosono, ECS J. Solid State Sci. Technol., 2, 5 (2013).   DOI
10 T. Kamiya, K. Nomura, and H. Hosono, Sci. Technol. Adv. Mater., 11, 044305 (2010).   DOI   ScienceOn
11 S. Hwang, J. H. Lee, C. H. Woo, J. Y. Lee, and H. K. Cho, Thin Solid Films, 519, 5146 (2011).   DOI
12 L. M. Terman, Solid-State Electron, 5, 285 (1962).   DOI   ScienceOn
13 H. S. Shin, B. D. Ahn, Y. S. Rim, and H. J. Kim, J. KIEEME, 24, 473 (2011).
14 J. H. Jeong, H. W. Yang, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, J. Song, and C. S. Hwang, Electrochemical and Solid State Lett., 11, H157 (2008).   DOI   ScienceOn
15 J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett., 93, 033513 (2008).   DOI   ScienceOn