• Journal of Biomedical Engineering Research
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• v.39 no.3
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• pp.116-123
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• 2018

This study is a model experimental study using a phantom to propose an optimized brain CT scan protocol that can reduce the radiation dose of a patient and remain quality of image. We investigate the CT scan parameters of brain CT in clinical medical institutions and to measure the important parameters that determine the quality of CT images. We used 52 multislice spiral CT (SOMATOM Definition AS+, Siemens Healthcare, Germany). The scan parameters were tube voltage (kVp), tube current (mAs), scan time, slice thickness, pitch, and scan field of view (SFOV) directly related to the patient's exposure dose. The CT dose indicators were CTDIvol and DLP. The CT images were obtained while increasing the imaging conditions constantly from the phantom limit value (Q1) to the maximum value (Q4) for AAPM CT performance evaluation. And statistics analyzed with Pearson's correlation coefficients. The result of tube voltage that the increase in tube voltage proportionally increases the variation range of the CT number. And similar results were obtained in the qualitative evaluation of the CT image compared to the tube voltage of 120 kVp, which was applied clinically at 100 kVp. Also, the scan conditions were appropriate in the tube current range of 250 mAs to 350 mAs when the tube voltage was 100 kVp. Therefore, by applying the proposed brain CT scanning parameters can be reduced the radiation dose of the patient while maintaining quality of image.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.148-155
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• 2009

In this paper, we analysed what effect the design variables, such as refractive index, central thickness and radius of curvature, had on the first order properties and image quality of optical systems when temperature changed. The optical parameters were varied at each temperature, then the coupling and ruler methods were used to design an athermalized lens for a phone camera. This concept was first used to design the lens for a 1/3.2" 5M phone camera. The designed lens satisfies all the specifications for a phone camera, and the variations of the back focal length(${\Delta}BFL$) are reduced to $10{\mu}m$ for a temperature range of $-10^{\circ}C$ to $+60^{\circ}C$. Also, the TTL of 5.5 mm results in a compact system. All design concepts and results discussed in this paper are expected to be useful in development for the phone and CCTV camera.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.05a
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• pp.303-307
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• 2009

Secondary flow losses can be as high as $30{\sim}50%$ of the total aerodynamic losses generated in the cascade of a turbine. Therefore, these are important part for improving a turbine efficiency. As well, many studies have been performed to decrease the secondary flow losses. The present study deals with the leading edge fences on a wing-body to decrease a horseshoe vortex, one of the factors to generate the secondary flow losses, and optimizes the shape of leading-edge fence with the shape factors, such as the installed height, length, width, and thickness of the fence as the design variables. The study was investigated using $FLUENT^{TM}$ and $iSIGHT^{TM}$. Total pressure loss coefficient was improved about 7.5 % than the baseline case.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.23-30
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• 1999

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.

• Smart Structures and Systems
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• v.15 no.6
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• pp.1393-1410
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• 2015

An original sensor system based on Fiber Bragg Gratings (FBG) for the strain monitoring of an adaptive wing element is presented in this paper. One of the main aims of the SARISTU project is in fact to measure the shape of a deformable wing for performance optimization. In detail, an Adaptive Trailing Edge (ATE) is monitored chord- and span-wise in order to estimate the deviation between the actual and the desired shape and, then, to allow attaining a prediction of the real aerodynamic behavior with respect to the expected one. The integration of a sensor system is not trivial: it has to fit inside the available room and to comply with the primary issue of the FBG protection. Moreover, dealing with morphing structures, large deformations are expected and a certain modulation is necessary to keep the measured strain inside the permissible measure range. In what follows, the mathematical model of an original FBG-based structural sensor system is presented, designed to evaluate the chord-wise strain of an Adaptive Trailing Edge device. Numerical and experimental results are compared, using a proof-of-concept setup. Further investigations aimed at improving the sensor capabilities, were finally addressed. The elasticity of the sensor structure was exploited to enlarge both the measurement and the linearity range. An optimisation process was then implemented to find out an optimal thickness distribution of the sensor system in order to alleviate the strain level within the referred component.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1011-1019
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• 2015

Insulated-gate bipolar transistors (IGBTs) are the predominantly used power semiconductors for high-current applications, and are used in trains, airplanes, electrical, and hybrid vehicles. IGBT power modules generate a considerable amount of heat from the dissipation of electric power. This heat generation causes several reliability problems and deteriorates the performances of the IGBT devices. Therefore, thermal management is critical for IGBT modules. In particular, realizing a proper thermal design for which the device temperature does not exceed a specified limit has been a key factor in developing IGBT modules. In this study, we investigate the thermal behavior of the 1200 A, 3.3 kV IGBT module package using finite-element numerical simulation. In order to minimize the temperature of IGBT devices, we analyze the effects of various packaging materials and different thickness values on the thermal characteristics of IGBT modules, and we also perform a design-of-experiment (DOE) optimization

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.595-601
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• 2013

This paper presents an optimized design of a millimeter-wave on-chip dipole antenna using CMOS process. The serious flaw of the antenna using CMOS process is low radiation efficiency because of high permittivity and conductivity. To overcome the weakness, we need to widen radiation area in air and optimize distance between an antenna and a reflector. The radiation efficiency and bandwidth of the designed antenna are respectively 16.5 % and 22.3 % at 80 GHz. Systematic methods are attempt to analyze an effect on the antenna radiation efficiency. To widen radiation area in air, substrate cut angle and distance between the antenna and chip edge are adjusted. In addition, to optimize distance between an antenna and reflector, substrate thickness and distance between the antenna and a circuit ground plane are adjusted.

• Composites Research
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• v.29 no.3
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• pp.98-103
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• 2016

This paper deals with the fabrication and verification of the microwave absorbing structure using semiconductive fiber reinforced composite. Two kinds of fiber were used to fabricate composites. Electromagnetic properties of the composites were measured by freespace measurement system over X-band. Two single slab absorbers and a double slab absorber were designed by thickness optimization method. Single slab absorbers did not show good microwave absorption performance because the permittivity is away from non-reflection curve. Double slab absorber complemented the limitations on single slab absorber and it showed good microwave absorption performance. Double slab absorber showed -43.9 dB loss near 10 GHz.