• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1096-1100
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• 2008

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.340-345
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• 1999

In this paper, polyimide thin films are fabricated by vapor deposition polymerization method appling to the interlayer insulator of semiconductor device, and are investigated in detail. It is found that the packing density and uniformity of films deposited by thermal evaporation are increased according to curing temperature. The resistivity, breakdown strength, relative permitivity, and dielectric loss are $3.2\tomes10^{15}\Omega$cm, 4.61 MV/cm, 2.9(10kHz) at $25^{\circ}C$, respectively. This thin films can be endured at $230^{\circ}C$ for 20,000 hours. Finally, we conclude that the thin films having the characteristics similar to those of $SiO_2$ can be used as an insulation films between layers of semiconductor device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.468-468
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• 2013

Self-assembled silver nanoparticles were synthesized on a graphene film to investigate plasmonic effect. Graphene was synthesized on glass substrate using chemical vapor deposition method and transfer process. Silver nanoparticles were formed using thermal evaporator and post-annealing process. The shape of silver nanoparticles was measured using a scanning electron microscopy. The resonance wavelength of plasmonic effect on graphene-silver nanoparticles was measured using transmittance spectra. The plasmon resonance wavelength was increased from 400 nm to 424 nm according to the lateral dimension of silver nanoparticles. Also we confirmed a strong plasmon effect form Raman spectra, which were measured on graphene-silver nanoparticles. The result shows that plasmon resonance wavelength could be controlled by lateral dimension of silver nanoparticles, and transparent conductive films based on plasmonic graphene could be developed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.208-213
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• 2002

We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.235-235
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• 2006

Triphenylamine derivatives play important roles as hole transporting materials in organic light emitting devices. However, low molecular weight triphenylamine derivatives show low glass transition temperature and aggregation behavior, and the vapor deposition step of low molecular weight materials is incompatible with large area display fabrication. Conventional polymer PEDOT-PSS HTL has serious drawbacks such as the ITO anode corrosion, poor surface energy match with aromatic EMLs. To solve these problems, we introduced crosslinkable units to triphenylamine-based polymers to make insoluble HTL by thermal curing following spin-coating. Electrochemical and optical properties of the new hole transporting materials were investigated. In addition, the device characteristics obtained with new hole transporting polymers were investigated in details.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1470-1473
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• 2005

We proposed new triode-type Field Emitter Arays using Carbon NanoTubes(CNT-FEAs) as electron emission sources at low electric fields. The CNTs were selectively grown on the patterned catalyst layer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). In this structure, gate electrodes are located underneath the cathode electrodes and extracted gate is surrounded by CNT emitters. Furthermore, in order to control density of CNTs, we investigated effect of using rapid thermal annealing (RTA).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.864-868
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• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.88-92
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• 2010

Bottom gate and top gate field-effect transistor based carbon nanotube(CNT) were fabricated by CMOS process. Carbon nanotube directly grown by thermal chemical vapor deposition(CVD) using Ethylene ($C_2H_4$) gas at $700^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, bottom gate and top gate field-effect transistor successfully modulated the conductance of FET device.