한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1470-1473
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- 2005
Fabrication and Characteristics of CNT-FEAs with Under-gate Structure
- Noh, Hyung-Wook (Dept. of Electronics Eng, Sejong Univ.) ;
- Jun, Pil-Goo (Dept. of Electronics Eng, Sejong Univ.) ;
- Ko, Sung-Woo (School of Electrical Eng., Seoul Nat'l Univ.) ;
- Kwak, Byung-Hwak (Dept. of Electronics Eng, Sejong Univ.) ;
- Park, Sang-Sik (Dept. of Electronics Eng, Sejong Univ.) ;
- Lee, Jong-Duk (School of Electrical Eng., Seoul Nat'l Univ.) ;
- Uh, Hyung-Soo (Dept. of Electronics Eng, Sejong Univ.)
- Published : 2005.07.19
Abstract
We proposed new triode-type Field Emitter Arays using Carbon NanoTubes(CNT-FEAs) as electron emission sources at low electric fields. The CNTs were selectively grown on the patterned catalyst layer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). In this structure, gate electrodes are located underneath the cathode electrodes and extracted gate is surrounded by CNT emitters. Furthermore, in order to control density of CNTs, we investigated effect of using rapid thermal annealing (RTA).
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