Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Boundary and Surface on SnO2 Thin Films Grown by Different Oxygen Flow Gas

변화된 산소분압으로 증착된 SnO2 박막의 표면과 계면에 관한 연구

  • 오석균 (한국기초과학지원연구원 광주센터) ;
  • 신철화 (조선대학교 의과대학) ;
  • 정진 (조선대학교 물리학과)
  • Published : 2008.12.01
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Abstract

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

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References

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