1 |
Y. Arakawa and H. Sakaki, 'Multidimensional quantum well laser and temperature dependence of its threshold current', Appl. Phys. Lett., Vol. 40, No. 11, p. 939, 1982
DOI
|
2 |
J. Tatebayashi, Y. Arakawa, N. Haton, H. Ebe, M. Sugawara, H. Sudo, and A. Kuramata, 'InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition-Effects of post growth annealing on stacked InAs quantum dots', Appl. Phys. Lett., Vol. 85, No. 6, p. 1024, 2004
DOI
ScienceOn
|
3 |
C. K. Chia, S. J. Chua, Z. L. Miao, and Y. H. Chye, 'Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a nucleation-augmented method', Appl. Phys. Lett., Vol. 85, No. 4, p. 567, 2004
DOI
ScienceOn
|
4 |
O. B. Shchekin and D. G. Deppe, '1.3 InAs quantum dot laser with = 161 K from 0 to 80 ', Appl. Phys. Lett., Vol. 80, No. 18, p. 3277, 2002
DOI
ScienceOn
|
5 |
V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop'ev, 'Effect of matrix on InAs self-organized quantum dots on (001) InP substrate', Appl. Phys. Lett., Vol. 72, No. 3, p. 362, 1998
DOI
ScienceOn
|
6 |
B. Wang, F. Zhao, Y. Peng, Z. Jin, Y. Li, and S. Liu, 'Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate', Appl. Phys. Lett., Vol. 72, No. 19, p. 2433, 1998
DOI
ScienceOn
|
7 |
N. D. Zakharov, P. Werner, U. Gosele, R. Heitz, D. Bimberg, N. N. Ledentsov, V. M. Ustinov, B. V. Volovik, Zh. I. Alferov, N. K. Polyakov, V. N. Petrov, V. A. Egorov, and G. E. Cirlin, 'Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate', Appl. Phys. Lett., Vol. 76, No. 19, p. 2677, 2000
DOI
ScienceOn
|
8 |
유충현, '대기압 MOCVD 시스템을 이용하여 Si 기판 위에 자발적으로 형성된 InAs 양자점에 대한 연구', 전기전자재료학회논문지, 18권, 6호, p. 527, 2005
|
9 |
K. Yamaguchi, T. Okada, and F. Hiwatashi, 'Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells', Appl. Surf. Sci., Vol. 117-118, p. 700, 1997
DOI
ScienceOn
|
10 |
J. M. Moison, C. Guille, F. Houzay, F. Barthe, and M. Van Rompay, 'Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures', Physical Review B, Vol. 40, No. 9, p. 6149, 1989
DOI
ScienceOn
|
11 |
M. Sato and Y. Horikoshi, 'Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin-layer structures', J. Appl. Phys., Vol. 69, No. 11, p. 7697, 1991
DOI
|
12 |
J. A. Gupta, S. P. Watkins, R. Ares, and G. Soerensen, 'MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy', J. Cryst. Growth, Vol. 195, p. 205, 1998
DOI
ScienceOn
|
13 |
P. C. Sharma, K. W. Alt, D. Y. Yeh, and K. L. Wang, 'Temperature-dependent morphology of three-dimensional InAs islands grown on silicon', Appl. Phys. Lett., Vol. 75, No. 9, p. 1273, 1999
DOI
|
14 |
R. Heitz, N. N. Ledentsov, D. Bimberg, A. Yu. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, G. E. Cirlin, I. P. Soshinikov, N. D. Zakharov, P. Werner, and U. Gosele, 'Optical properties of InAs quantum dots in a Si matrix', Appl. Phys. Lett., Vol. 74, No. 12, p. 1701, 1999
DOI
ScienceOn
|
15 |
M. Oshima, Y. Watanabe, S. Heun, M. Sugiyama, and T. Kiyokura, 'Initial stages of nanocrystal growth of compound semiconductors on Si substrates', J. of Electron Spectrosc. Rel. Phenom., Vol. 80, p. 129, 1996
DOI
ScienceOn
|
16 |
T. Mano, H. Fujioka, K. Ono, Y. Watanabe, and M. Oshima, 'InAs nanocrystal growth on Si (100)', Appl. Surf. Sci., Vol. 130-132, p. 760, 1998
DOI
ScienceOn
|
17 |
J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H. S. Kwack, C. W. Lee, and D. K. Oh, 'Room-temperature operation of InP-based InAs quantum dot laser', IEEE Photonics Technol. Lett., Vol 16, No. 7, p. 1607, 2004
DOI
ScienceOn
|
18 |
J. M. Garcia, J. P. Silveira, and F. Briones, 'Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)', Appl. Phys. Lett., Vol. 77, No. 3, p. 409, 2000
DOI
ScienceOn
|
19 |
M. Asada, Y. Miyamoto, and Y. Suematsu, 'Gain and threshold of three-dimensional quantum-box lasers', IEEE J. Quantum Electron., Vol. 22, No. 9, p. 1915, 1986
DOI
|
20 |
G. E. Cirlin, N. K. Polyakov, V. A. Egorov, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, R. Heitz, D. Bimberg, N. D. Zakharov, P. Werner, and U. Gosele, 'Heteroepitaxial growth of InAs on Si: the new type of quantum dots', Mater. Phys. Mech., Vol. 1, p. 15, 2000
|