• 한국재료학회지
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• 제7권11호
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• pp.1018-1023
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• 1997

본 연구에서는 3C-SiC의 ohmic 접합에 대하여 그 전기적 특성과 미세구조의 상관관계에 대하여 분석하였다. 표준사진식각 공정을 통하여 ohmic접합 금속으로서 Ni을 진공증착시켜 일련의 TLM패턴으로 열처리에 따르는 전류-전압 특성을 조사하였고 TEM, SEM, AES, EDS를 사용하여 Ni/SiC 계면에 대한 미세구조, 화학적 특성을 분석하였다. 열처리 온도와 시간을 통한 thermal budget이 증가함에 따라서 접촉저항이 감소되었으며 그 값은 $10^{-2}$-$10^{-4}$Ω$\textrm{cm}^2$의 범위에 속하였다. EDS와 AES를 통하여 7$50^{\circ}C$이상의 열처리 후 silicide(NiSi$_{2}$)의 주변에 carbon층이 형성되는 것을 확인하였으며, 열처리 온도가 증가함에 따라서 island형 silicide의 크기가 조밀해지며 SiC와의 접착성이 향상됨을 알 수 있었다. Ni/3C-SiC ohmic 접합의 전기적 특성은 계면에 생성되는 silicide와 carbon의 형성거동에 의하여 결정되는 것으로 믿어진다.

• 한국자동차공학회논문집
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• 제5권5호
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• pp.51-66
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• 1997

A heat transfer model of the intake valve in a spark ignition engine is presented, which is calibrated with a number of the valve temperature profiles measured during engine warm-up for the gaseous fuel(propane). The valve is divided into four identical elements for which the assumption of lumped thermal mass is applied. The calibration is made so that the difference between the measued and simulated valve temperatures becomes minimal. Then the model is applied to the cases of the liquid fuel(indolene) to estimate the amount of the liquid fuel vaporized from the intake valve by assuming that fuel evaporation accounts for the deficit of the heat balance budget. The results of the model show quantitative contribution of each heat transfer source to the heat balance. The behavior of the calculated mass fraction of the fuel vaporized from the intake valve explains how the liquid fuel evaporate during engine warm-up. The mass fraction at warmed-up condition is closely related with the fraction directly targeted on the valve back by the fuel spray geometry.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1497-1502
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• 2013

Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.

• Journal of Magnetics
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• 제5권2호
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• pp.65-71
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• 2000

Although the electromagnetic launcher technology has been progressed significantly during the past two decades the number of firing test facilities are not many. This is prbably due to the large budget and man power required to build and maintain full scale electromagnetic launcher facilities. As the EM launcher technology's potential capabilities have been somewhat demonstrated with the full scale large systems the research is now headed more toward overcoming specific difficulties and answering questions experimentally with smaller, cost effective systems. The first half of this paper presents EM launcher's improved sub-scaling relationships based upon magnetic, thermal and momentum differential equations and EM launcher's basic equations. With the proposed scaling method the field variables can be matched or scaled linearly between the two geometrically scaled systems. The second half of the paper presents pulsed power system's circuit analysis and design technique, which is applied to the capacitor-powered small pulsed power system with crow-barring circuitry. The effect of the so-called speed volt is included. A sub-scaled small system's design is provided as an example.

• 한국결정성장학회지
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• 제13권6호
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• pp.261-266
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• 2003

결정질 규소를 이용한 태양전지의 제조에 필요한 texture 식각 공정에 초음파를 적용하였다. 이 결과 $60^{\circ}C$에서 초음파를 적용하여 식각된 규소 기판으로 제조된 태양전지의 광전변환효율이 기존의 방식대로 $70^{\circ}C$에서 초음파 없이 식각된 규소 기판으로 제조된 태양전지의 광전변환효율보다 높았다. 이 결과는 규소를 이용한 태양전지의 제조에 필요한 식각공정에서 초음파를 적용하면 공정 온도를 낮출 수 있고 또한 사용되는 고가의 용액을 줄일 수 있어 전체적으로 태양전지의 제조 가격을 낮출 수 있는 가능성을 보여준다.

• 한국결정성장학회지
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• 제14권2호
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.844-850
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• 2002

Linearly graded profiles on the field area oxide are frequently used in power integrated circuits to reduce the surface electric field when power devices are operated in forward or reverse blocking modes. It is shown here that tapered windows can be made using the difference of etch rates between the bottom and the top layer of TEOS film. Annealed TEOS films are etched at a lower rate than the TEOS film without annealing Process. The fast etching layer results in window walls having slopes in the range of 25$^{\circ}$∼ 80$^{\circ}$ with respect to the wafer surface. Taper etching technique by annealing the TEOS film applies to high voltage LDMOS, which is compatible with CMOS process, due to the minimum changes in both of design rules and thermal budget.

• ETRI Journal
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• 제25권4호
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.329-332
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• 2002

A theoretical study is made of the steady flow of a compressible fluid in a rapidly rotating finite cylinder. Flow is generated by imposing mechanical and/or thermal disturbances at the rotating endwall disks. Both the Ekman and Rossby numbers are small. A detailed consideration is given to the energy budget for a control volume in the Ekman boundary layer. A combination of physical variables, which is termed the energy contents, consisting of temperature and modified angular momentum, emerges to be relevant. The distinguishing features of a compressible fluid, in contrast to those of an incompressible fluid, are noted. For the Taylor-Proudman column to be sustained, in the interior, it is shown that the net energy transport between the solid disk wall and the interior fluid should vanish. Physical rationalizations are facilitated by resorting to the concept of the afore-stated energy content.

• 한국자기학회지
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• 제15권2호
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.