1 |
Tungsten gate technology for quarter-micron application
/
[
H.Noda;H.Sakiyama;Y.Gato;T.Kure;S.Kimura
] /
Jpn. J. Appl. Phys.
|
2 |
The halo nMOSFET characteristics dependent on the gate profile
/
[
J.H.Kim;J.H.Chou;D.H.Song;Y.J.Lee;K.H.Lee
] /
Proc. ICVC International Conference on VLSI & CAD
|
3 |
A review of hotcarrier degradation mechanisms in MOSFETs
/
[
A.Acovic;G.L.Rosa;Y.C.Sun
] /
Microelectron. Reliab
|
4 |
A fully working 0.14㎛ DRAM technology with polymetal (W.W<TEX>$N_x$</TEX>/poly-Si) gate
/
[
J.W.Jung;S.W.Lee;Y.G.Sung;B.H.Lee;J.H.Choi;B.J.Lee;R.H.Park;S.B.Han
] /
Tech. Dig. Int. electron Dev. Meeting
|
5 |
Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure
/
[
E.Wu,E.Nowak;J.Aitken;W.Abadeer;L.K.Han;S.Lo,Tech.Dig
] /
Int. Electron Dev. Meeting
|
6 |
In-situ barrier formation for high reliable W/barrier/poly-Si gate using denudation of WNx on polycrystalline Si
/
[
B.H.Lee;D.K.Sohn;J.S.Park;C.H.Han;Y.J.Huh;J.S.Byun;J.J.Kim
] /
Tech. Dig. Int. Electron Dev. Meeting
|