• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.400-405
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• 2015

Traditional anti-reflective (AR) coating films prepared using tetraethylorthosilicate (TEOS) as a precursor absorbs water easily in addition to having a weak abrasion resistance. To improve the transmittance, hydrophobicity and abrasion resistance of AR coating film, various AR coating films were prepared using methyltrimethoxysilane (MTMS) as a precursor in addition to introducing a fluoroalkylsilane, acid catalyst, base catalyst and acid-base two step catalyst. The prepared AR coating films were then characterized by UV-Vis spectroscopy, contact angle analyzer, atomic force microscope (AFM), pencil scratch hardness test and cross-cut test. As a result, the transmittance of bare glass was 90.5%, while that of AR coating glass increased to 94.8% at curing temperature of $300^{\circ}C$. When the fluoroalkylsilane was added, the water contact angle of AR coating film increased from $96.3^{\circ}$ to $108^{\circ}$, indicating that the hydrophobicity of the film was greatly improved. The abrasion resistance of AR coating film was also improved by the acid catalyst, whereas the transmittance increased by the base catalyst. In the case of AR coating film prepared using an acid-base two step catalyzed reaction, both the transmittance and abrasion resistance of the film was synergistically enhanced as compared with those of AR coating films prepared without introduction of a catalyst.

• Membrane Journal
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• v.24 no.3
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• pp.177-184
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• 2014

Silica membranes with high permeability were prepared using colloidal and polymeric silica sols on a porous stainless steel-tube support by a DRFF and SRFF method. Silica sols were derived with tetraethylorthosilicate (TEOS) by sol-gel method and analyzed with DLS, FE-SEM, and $N_2$ adsorption. The coating of the intermediate layer with colloidal silica sol on the stainless steel-tube support led to a denser surface morphology of the membrane along with a considerable reduction in the number of surface defect. As the polymeric silica sol enclosed the colloidal silica sol with spherical particles during the SRFF method, the separation-layer-coated silica membrane showed a denser surface than the intermediate layer. Moreover, the silica membranes showed high hydrogen gas permeability of $(6.63-9.21){\times}10^{-5}mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ with low $H_2/N_2$ perm-selectivity (2.9-3.1) at room temperatures.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.233-238
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• 1995

'#65279;We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS(tetraethylorthosilicate), TMPite(trimethylphosphite) and phosphine($PH_3$). And We studied and compared between TMPite and PH, as a dopant of P in PSG films in the aspect of the de,position characteristics. Deposition rate of TMPate-PSG films was $55 \AA/min$ which was smaller than 90 A/min , that of $PH_3-PSG$ films. Thickness deviation of TMPate-PSG films was 2% and that of PH3-PSG was 4.5%. So TMPate-PSG films had a good quality in thickness uniformity. The range of refractive index was controlled from 1.445 to 1.468 at 633 nm in TMPate-PSG films and it was controlled from 1.456 to 1.476 in $PH_3-PSG$ films.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.69-73
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• 2009

We report the preparation of nanocrystalline cobalt ferrite, $CoFe_2O_4$ particles and their surface coating with silica layers using micro emulsion method. The cobalt ferrite nanoparticles with the size 7nm are firstly prepared by thermal decomposition method. Hydrophobic nanoparticles were coated with silica using micro-emulsion method with surfactant, $NH_4OH$, and tetraethylorthosilicate (TEOS). Monodispersed and spherical silica coated cobalt ferrite nanoparticles have average particle diameter of 38 nm and narrow sized distribution.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.12
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• pp.153-159
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• 1997

A thermally-driven polysilicon microactuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS(tetraethylorthosilicate) oxide as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And newly developed HF GPE(gas-phase etching) process was also employed to eliminate the troublesome stiction problem using anhydrous HF gas and CH$_{3}$OH vapor, and successfully fabricated the microactuators. The actuation is incurred by the thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon microactuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10V and 50Hz square wave. The actuating characteris- tics are also compared with the simulalted results considering heat transfer and thermal expansion in the polysilicon layer. This microactuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2367-2370
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• 2014

"Cat's eye"-shaped $[^{57}Co]CoO@SiO_2$ core-shell nanostructure was prepared by the reverse microemulsion method combined with radioisotope technique to investigate a potential imaging agent for a single photon emission computed tomography (SPECT) in nuclear medicine. The core cobalt oxide nanorods were obtained by thermal decomposition of $Co-(oleate)_2$ precursor from radio isotope Co-57 containing cobalt chloride and sodium oleate. The $SiO_2$ coating on the surface of the core cobalt oxide nanorods was produced by hydrolysis and a condensation reaction of tetraethylorthosilicate (TEOS) in the water phase of the reverse microemulsion system. In vivo test, micro SPECT image was acquired with nude mice after 30 min of intravenous injection of $[^{57}Co]CoO@SiO_2$ core-shell nanostructure.

• Journal of environmental and Sanitary engineering
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• v.13 no.3
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• pp.58-65
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• 1998

Monodispersed $SiO_2/ZnO$ composite fine powders were prepared by Sol-Gel processing and their surface electrical and UV absorbance properties were investigated. Pseudomorph ZnO fine powders were microcapsuled by $SiO_2/ZnO$ sol fabricated using TEOS[tetraethylorthosilicate, purity 98% and ethanol as a solvent with $NH_3$ catalyst. The effects of experimental parameters such as molar ratio of starting materials on the final particle size and shape of $SiO_2/ZnO$ composite fine powder were discussed. As a result, we could controlled the size of monodispersed $SiO_2/ZnO$ composite fine powders without agglomeration, as well as the good dispersibility in aquous solution. The prepared powders were observed to have the mean particle sizes of $0.26-0.78{\mu}m$ with standard deviations of $0.020-0.063{\mu}m$.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3668-3674
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• 2010

Mesoporous SBA-15 was synthesized using tetraethylorthosilicate (TEOS) as the silica source and Pluronic (P123) as the structure-directing agent. The defective Si-OH groups present in SBA-15 were successively grafted with 3-chloropropyltrimethoxysilane (CPTMS) followed by tris-(2-aminoethyl) amine (TAEA) and/or tetraethylenepentamine (TEPA) for effective immobilization of silver nanoparticles. Grafting of TAEA and/or TEPA amine and immobilization of silver nanoparticles inside the channels of SBA-15 was verified by XRD, TEM, IR and BET techniques. The silver nanoparticles immobilized on TAEA and /or TEPA grafted SBA-15 was subjected for electrocatalytic reduction of hydrogen peroxide ($H_2O_2$). The TEPA stabilized silver nanoparticles show higher efficiency for reduction of $H_2O_2$ than that of TAEA, due to higher number of secondary amine groups present in TEPA. The amperometric analysis indicated that both the Ag/SBA-15/TAEA and Ag/SBA-15/TEPA modified electrodes required lower over-potential and hence possess high sensitivity towards the detection of $H_2O_2$. The reduction peak currents were linearly related to hydrogen peroxide concentration in the range between $3{\times}10^{-4}\;M$ and $2.5{\times}10^{-3}\;M$ with correlation coefficient of 0.997 and detection limit was $3{\times}10^{-4}\;M$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.