• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.576-580
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• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• 센서학회지
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• 제27권5호
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• pp.328-334
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• 2018

The paper reviews an improved continuous-wave (CW) terahertz (THz) imaging system developed for nondestructive inspection, such as CW-THz quasi-time-domain spectroscopy (QTDS) and interferometry. First, a comparison between CW and pulsed THz imaging systems is reported. The CW-THz imaging system is a simple, fast, compact, and relatively low-cost system. However, it only provides intensity data, without depth and frequency- or time-domain information. The pulsed THz imaging system yields a broader range of information, but it is expensive because of the femtosecond laser. Recently, to overcome the drawbacks of CW-THz imaging systems, many studies have been conducted, including a study on the QTDS system. In this system, an optical delay line is added to the optical arm leading to the detector. Another system studied is a CW-THz interferometric imaging system, which combines the CW-THz imaging system and far-infrared interferometer system. These systems commonly obtain depth information despite the CW-THz system. Reportedly, these systems can be successfully applied to fields where pulsed THz is used. Lastly, the applicability of these systems for nondestructive inspection was confirmed.

• 센서학회지
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• 제27권5호
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• pp.335-339
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• 2018

The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

• 전자통신동향분석
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• 제35권4호
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• pp.53-64
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• 2020

The terahertz (THz) region lies in between the millimeter and infrared spectral bands. A THz wave has the characteristics of non-invasiveness and non-ionization due to low photon energies, while having high penetrability in dielectrics. In addition, since the resonance frequencies of various molecules are included in the THz band, research on the application of spectral analysis and non-destructive testing has been widely studied. Towards this end, the research and development of THz detectors has become increasingly important in order to assess their applications in different areas such as astronomy, security, industrial non-destructive evaluations, biological applications, and wireless communications. In this report, we summarize the operating principles, characteristics, and utilization of various broadband technologies in THz detection devices. Further, we introduce the development status of our Schottky barrier diode technology as one of the broadband THz detectors that can be easily adopted as direct detectors in many fields of applications.

• 보존과학회지
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• 제35권3호
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• pp.237-244
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• 2019

본 연구에서는 우리나라 근대시기 유화 작품 3점('소년', '소녀', '혜화동풍경')에 테라헤르츠 이미징 기법을 활용하여 추출 가능한 작품 내부 정보의 종류와 이를 추출하기 위한 분석 조건을 연구하였다. 또한 테라헤르츠 스캔 적용 시 대상 작품의 굴곡에 따라 분석 대상 표면과 검출부 사이의 거리가 변화되어 발생하는 이미지 왜곡이 주된 문제점임을 파악하고, 이를 보완하기 위한 방법으로 '작동 거리 유지 장치'를 고안하였다. 연구 결과, 테라헤르츠 이미징 기법을 이용하여 유화의 바탕재 특성과 내부의 손상형태를 파악할 수 있음을 확인하였고 각 특성을 확인할 수 있는 최적의 조건을 제시하였다. 바탕재의 특성과 하부층 확인에는 테라헤르츠 주파수 분해 이미지를 활용하는 것이 유용하였으며 붓터치 등 채색기법을 파악하는 것에는 최대 반사피크 이미지와 단면 이미지가 효과적이었다. 또한 표면에서 관찰할 수 없는 작품 내부 손상 정보는 단면 이미지와 주파수 분해 이미지를 비교하는 것이 유용하였다. 회화작품에 적용한 결과, '소년'과 '소녀'에서는 내부의 구조적 손상 자국을, '혜화동풍경'에서는 작가의 채색 방식을 확인하였다. 이상의 결과는 우리나라 근대기 유화의 예방보존 및 보존처리를 위한 상태분석 및 진단에 활용될 수 있을 것으로 기대된다.

• 전자통신동향분석
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• 제27권5호
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• pp.73-84
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• 2012

테라헤르츠파는 0.1~10THz 대역의 미개발 주파수 자원으로 전자기파 스펙트럼에서 적외선과 밀리미터파의 중간 영역에 위치한다. 전파의 투과성과 광파의 직진성을 동시에 가지고 있어 독특한 물리적 특성을 보유한 테라헤르츠파는 THz 소자, 분광, 영상 기술 등의 기초 과학과 의공학, 보안, 환경/우주, 정보통신 등의 응용 과학 분야에서 이미 그 중요성이 검증되어 향후 폭넓은 산업 응용으로 다양한 분야에서 새로운 형태의 시장이 형성될 것으로 기대된다. 이러한 테라헤르츠파 기술의 사회, 경제적 파급력을 극대화하기 위해서는 테라헤르츠 대역 소자의 특성을 향상시키고, 크기와 가격을 낮추는 것이 매우 중요하다. 본고에서는 크기와 가격을 낮출 수 있는 포토닉스 기반의 테라헤르츠 가변형 연속파 신호원 및 검출기 기술과 이를 기반으로 구현 가능한 응용 기술 동향에 대하여 기술하였다.

• Journal of Communications and Networks
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• 제15권6호
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• 한국진공학회지
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• 제21권5호
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• pp.264-272
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• 2012

본 논문에서는 InGaAs 반도체에 기반한 테라헤르쯔(THz) 송/수신기(Tx/Rx) 제작을 위한 기초 연구로서, InGaAs 박막의 THz 발생 및 검출 특성에 관한 결과를 보고한다. THz 발생과 검출 특성 조사에는 각각 MBE 장비로 고온(HT) 및 저온(LT)에서 성장한 InGaAs 박막이 사용되었으며, THz 발생에는 photo-Dember 표면방출 방법이 시도되었다. HT-InGaAs 기판 위에 제작한 전송선(Ti/Au)의 가장자리에 Ti:Sapphire fs 펄스 레이저(60 ps/83 MHz)를 조사하여 THz파를 발생시켰으며, 이때 THz 검출에는 LT-GaAs가 사용되었다. 시간지연에 따른 전류신호를 Fourier 변환하여 얻은 THz 스펙트럼의 주파수 범위는 약 0.5~2 THz이었으며, 여기 레이저 출력에 대한 신호의 세기는 지수함수적 변화를 보였다. THz 검출 특성에 사용한 LT-InGaAs Rx에는 쌍극자(5/20 ${\mu}m$) 구조의 안테나가 탑재되어 있으며, 차단 주파수는 약 2 THz이었다.