한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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InGaAs 반도체 박막의 테라헤르쯔(THz) 발생 및 검출 특성 연구

A Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers

  • 박동우 (전북대학교 신소재공학부) ;
  • 김진수 (전북대학교 신소재공학부) ;
  • 노삼규 (한국표준과학연구원 양자검출소자 글로벌연구실) ;
  • 지영빈 (한국해양대학교 전기전자공학부) ;
  • 전태인 (한국해양대학교 전기전자공학부)
  • Park, D.W. (Faculty of New Materials Engineering, Chonbuk National University) ;
  • Kim, J.S. (Faculty of New Materials Engineering, Chonbuk National University) ;
  • Noh, S.K. (Global Research Laboratory on Quantum Detector Technology, Korea Research Institute of Standards and Science) ;
  • Ji, Young-Bin (Faculty of Electrical and Electronic Enigneering, Korea Marine University) ;
  • Jeon, T.I. (Faculty of Electrical and Electronic Enigneering, Korea Marine University)
  • 투고 : 2012.07.23
  • 심사 : 2012.09.10
  • 발행 : 2012.09.30
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초록

본 논문에서는 InGaAs 반도체에 기반한 테라헤르쯔(THz) 송/수신기(Tx/Rx) 제작을 위한 기초 연구로서, InGaAs 박막의 THz 발생 및 검출 특성에 관한 결과를 보고한다. THz 발생과 검출 특성 조사에는 각각 MBE 장비로 고온(HT) 및 저온(LT)에서 성장한 InGaAs 박막이 사용되었으며, THz 발생에는 photo-Dember 표면방출 방법이 시도되었다. HT-InGaAs 기판 위에 제작한 전송선(Ti/Au)의 가장자리에 Ti:Sapphire fs 펄스 레이저(60 ps/83 MHz)를 조사하여 THz파를 발생시켰으며, 이때 THz 검출에는 LT-GaAs가 사용되었다. 시간지연에 따른 전류신호를 Fourier 변환하여 얻은 THz 스펙트럼의 주파수 범위는 약 0.5~2 THz이었으며, 여기 레이저 출력에 대한 신호의 세기는 지수함수적 변화를 보였다. THz 검출 특성에 사용한 LT-InGaAs Rx에는 쌍극자(5/20 ${\mu}m$) 구조의 안테나가 탑재되어 있으며, 차단 주파수는 약 2 THz이었다.

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

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