JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures

  • Ryu, Min Woo (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology) ;
  • Kim, Sung-Ho (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology) ;
  • Kim, Kyung Rok (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology)
  • Received : 2012.05.10
  • Accepted : 2013.07.19
  • Published : 2013.12.31
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Abstract

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

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